Morphological and optical properties of silicon thin films by PLD

R. Ayouchi; R. Schwarz; L. V. Melo; R. Ramalho; E. Alves; C. P. Marques; L. Santos; R. Almeida; O. Conde

doi:10.1016/j.apsusc.2008.10.056

Morphological and optical properties of silicon thin films by PLD

R. Ayouchi, R. Schwarz, L. V. Melo, R. Ramalho, E. Alves, C. P. Marques, L. Santos, R. Almeida, O. Conde

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Silicon thin films have been prepared on sapphire substrates by pulsed laser deposition (PLD) technique. The films were deposited in vacuum from a silicon target at a base pressure of 10 ^-6 mbar in the temperature range from 400 to 800 °C. A Q-switched Nd:YAG laser (1064 nm, 5 ns duration, 10 Hz) at a constant energy density of 2 J × cm ^-2 has been used. The influence of the substrate temperature on the structural, morphological and optical properties of the Si thin films was investigated. Spectral ellipsometry and atomic force microscopy (AFM) were used to study the thickness and the surface roughness of the deposited films. Surface roughness values measured by AFM and ellipsometry show the same tendency of increasing roughness with increased deposition temperature.

Original language	English
Pages (from-to)	5299-5302
Number of pages	4
Journal	Applied Surface Science
Volume	255
Issue number	10
DOIs	https://doi.org/10.1016/j.apsusc.2008.10.056
State	Published - 1 Mar 2009
Externally published	Yes

Keywords

Nano-crystalline silicon
Pulsed laser deposition
Thin films

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2008.10.056

Cite this

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title = "Morphological and optical properties of silicon thin films by PLD",

abstract = " Silicon thin films have been prepared on sapphire substrates by pulsed laser deposition (PLD) technique. The films were deposited in vacuum from a silicon target at a base pressure of 10 -6 mbar in the temperature range from 400 to 800 °C. A Q-switched Nd:YAG laser (1064 nm, 5 ns duration, 10 Hz) at a constant energy density of 2 J × cm -2 has been used. The influence of the substrate temperature on the structural, morphological and optical properties of the Si thin films was investigated. Spectral ellipsometry and atomic force microscopy (AFM) were used to study the thickness and the surface roughness of the deposited films. Surface roughness values measured by AFM and ellipsometry show the same tendency of increasing roughness with increased deposition temperature.",

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doi = "10.1016/j.apsusc.2008.10.056",

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T1 - Morphological and optical properties of silicon thin films by PLD

AU - Ayouchi, R.

AU - Schwarz, R.

AU - Melo, L. V.

AU - Ramalho, R.

AU - Alves, E.

AU - Marques, C. P.

AU - Santos, L.

AU - Almeida, R.

AU - Conde, O.

PY - 2009/3/1

Y1 - 2009/3/1

N2 - Silicon thin films have been prepared on sapphire substrates by pulsed laser deposition (PLD) technique. The films were deposited in vacuum from a silicon target at a base pressure of 10 -6 mbar in the temperature range from 400 to 800 °C. A Q-switched Nd:YAG laser (1064 nm, 5 ns duration, 10 Hz) at a constant energy density of 2 J × cm -2 has been used. The influence of the substrate temperature on the structural, morphological and optical properties of the Si thin films was investigated. Spectral ellipsometry and atomic force microscopy (AFM) were used to study the thickness and the surface roughness of the deposited films. Surface roughness values measured by AFM and ellipsometry show the same tendency of increasing roughness with increased deposition temperature.

AB - Silicon thin films have been prepared on sapphire substrates by pulsed laser deposition (PLD) technique. The films were deposited in vacuum from a silicon target at a base pressure of 10 -6 mbar in the temperature range from 400 to 800 °C. A Q-switched Nd:YAG laser (1064 nm, 5 ns duration, 10 Hz) at a constant energy density of 2 J × cm -2 has been used. The influence of the substrate temperature on the structural, morphological and optical properties of the Si thin films was investigated. Spectral ellipsometry and atomic force microscopy (AFM) were used to study the thickness and the surface roughness of the deposited films. Surface roughness values measured by AFM and ellipsometry show the same tendency of increasing roughness with increased deposition temperature.

KW - Nano-crystalline silicon

KW - Pulsed laser deposition

KW - Thin films

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EP - 5302

JO - Applied Surface Science

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IS - 10

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Morphological and optical properties of silicon thin films by PLD

Abstract

Keywords

ASJC Scopus subject areas

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