Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire

Y. Golan, X. H. Wu, J. S. Speck, R. P. Vaudo, V. M. Phanse

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64 Scopus citations

Abstract

The early stages of hydride vapor phase epitaxy (HVPE) of GaN on sapphire were studied using atomic force microscopy, field-emission scanning electron microscopy, cross-sectional transmission electron microscopy, and x-ray diffraction rocking curves. At the high growth rate used (∼33 nm/s), the films appear to be fully coalesced for growth periods as short as 1 s. A distinct surface and subsequent bulk transformation were observed, resulting in significantly smoother film surfaces and improved bulk morphology. The growth of thick (i.e., 300 μm) GaN films using HVPE offers a promising technique for the deposition of high-quality substrates for GaN homoepitaxy.

Original languageEnglish
Pages (from-to)3090-3092
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number21
DOIs
StatePublished - 1 Dec 1998
Externally publishedYes

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