Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire

Keyphrases

• Morphological Evolution 100%
• Microstructural Evolution 100%
• Hydride Vapor Phase Epitaxy 100%
• GaN-on-sapphire 100%
• Diffraction 33%
• Growth Period 33%
• Atomic Force Microscopy 33%
• Bulk Morphologies 33%
• GaN Films 33%
• High Growth Rate 33%
• Film Surface 33%
• Rocking Curve 33%
• Field Emission Scanning Electron Microscopy (FE-SEM) 33%
• Cross-sectional Transmission Electron Microscopy 33%
• Homoepitaxy 33%

Material Science

• Film 100%
• Sapphire 100%
• Hydride 100%
• Microstructural Evolution 100%
• Vapor Phase Epitaxy 100%
• Transmission Electron Microscopy 33%
• Homoepitaxy 33%
• Field Emission Scanning Electron Microscopy 33%

Engineering

• Early Stage 100%
• Microstructural Evolution 100%
• Transmissions 50%
• Ray Diffraction 50%
• Atomic Force Microscopy 50%
• Film Surface 50%
• Field-Emission Scanning Electron Microscopy 50%
• High Growth Rate 50%