Morphology control of mixed halide perovskite for its application in low-cost thin film transistor

Anwesha Choudhury; Priyanka Dogra; Biki Teron; Ritesh Kant Gupta; Anamika Dey; Ashish Singh; Rabindranath Garai; Parameswar Krishnan Iyer

doi:10.1109/ICPEICES.2018.8897437

Morphology control of mixed halide perovskite for its application in low-cost thin film transistor

Anwesha Choudhury
, Priyanka Dogra
, Biki Teron
, Ritesh Kant Gupta
, Anamika Dey
, Ashish Singh
, Rabindranath Garai
, Parameswar Krishnan Iyer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Organic-inorganic perovskite has gained popularity in recent times because of its high carrier mobility, easy and low cost processing for various optoelectronic application. In this paper we have demonstrated the variation of the growth and nucleation of perovskite thin film on various dielectric layers. Thereafter we report the fabrication and characterization of perovskite FET. We propose that growth of the perovskite depends on the dielectric layer on which it is coated. MACI and PbI₂ based perovskite forms a stable film and the nucleation depends on the aging of the precursor solution. Hence by controlling of the perovskite film morphology, a high performing device can be obtained. Hence a low cost and well performing TFT is reported.

Original language	English
Title of host publication	2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018
Publisher	Institute of Electrical and Electronics Engineers
Pages	743-747
Number of pages	5
ISBN (Electronic)	9781538666258
DOIs	https://doi.org/10.1109/ICPEICES.2018.8897437
State	Published - 1 Oct 2018
Externally published	Yes
Event	2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018 - Delhi, India Duration: 22 Oct 2018 → 24 Oct 2018

Publication series

Name	2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018

Conference

Conference	2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018
Country/Territory	India
City	Delhi
Period	22/10/18 → 24/10/18

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Annealing
Dielectric
Morphology
Nucleation
Perovskite

ASJC Scopus subject areas

Control and Optimization
Artificial Intelligence
Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Mechanical Engineering

Access to Document

10.1109/ICPEICES.2018.8897437

Cite this

Choudhury, A., Dogra, P., Teron, B., Gupta, R. K., Dey, A., Singh, A., Garai, R., & Iyer, P. K. (2018). Morphology control of mixed halide perovskite for its application in low-cost thin film transistor. In 2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018 (pp. 743-747). Article 8897437 (2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICPEICES.2018.8897437

Choudhury, Anwesha ; Dogra, Priyanka ; Teron, Biki et al. / Morphology control of mixed halide perovskite for its application in low-cost thin film transistor. 2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018. Institute of Electrical and Electronics Engineers, 2018. pp. 743-747 (2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018).

@inproceedings{2094b34fa5724cb8a9d8fb0a0416b446,

title = "Morphology control of mixed halide perovskite for its application in low-cost thin film transistor",

abstract = "Organic-inorganic perovskite has gained popularity in recent times because of its high carrier mobility, easy and low cost processing for various optoelectronic application. In this paper we have demonstrated the variation of the growth and nucleation of perovskite thin film on various dielectric layers. Thereafter we report the fabrication and characterization of perovskite FET. We propose that growth of the perovskite depends on the dielectric layer on which it is coated. MACI and PbI2 based perovskite forms a stable film and the nucleation depends on the aging of the precursor solution. Hence by controlling of the perovskite film morphology, a high performing device can be obtained. Hence a low cost and well performing TFT is reported.",

keywords = "Annealing, Dielectric, Morphology, Nucleation, Perovskite",

author = "Anwesha Choudhury and Priyanka Dogra and Biki Teron and Gupta, \{Ritesh Kant\} and Anamika Dey and Ashish Singh and Rabindranath Garai and Iyer, \{Parameswar Krishnan\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018 ; Conference date: 22-10-2018 Through 24-10-2018",

year = "2018",

month = oct,

day = "1",

doi = "10.1109/ICPEICES.2018.8897437",

language = "English",

series = "2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018",

publisher = "Institute of Electrical and Electronics Engineers",

pages = "743--747",

booktitle = "2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018",

address = "United States",

}

Choudhury, A, Dogra, P, Teron, B, Gupta, RK, Dey, A, Singh, A, Garai, R & Iyer, PK 2018, Morphology control of mixed halide perovskite for its application in low-cost thin film transistor. in 2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018., 8897437, 2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018, Institute of Electrical and Electronics Engineers, pp. 743-747, 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018, Delhi, India, 22/10/18. https://doi.org/10.1109/ICPEICES.2018.8897437

Morphology control of mixed halide perovskite for its application in low-cost thin film transistor. / Choudhury, Anwesha; Dogra, Priyanka; Teron, Biki et al.
2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018. Institute of Electrical and Electronics Engineers, 2018. p. 743-747 8897437 (2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Morphology control of mixed halide perovskite for its application in low-cost thin film transistor

AU - Choudhury, Anwesha

AU - Dogra, Priyanka

AU - Teron, Biki

AU - Gupta, Ritesh Kant

AU - Dey, Anamika

AU - Singh, Ashish

AU - Garai, Rabindranath

AU - Iyer, Parameswar Krishnan

PY - 2018/10/1

Y1 - 2018/10/1

N2 - Organic-inorganic perovskite has gained popularity in recent times because of its high carrier mobility, easy and low cost processing for various optoelectronic application. In this paper we have demonstrated the variation of the growth and nucleation of perovskite thin film on various dielectric layers. Thereafter we report the fabrication and characterization of perovskite FET. We propose that growth of the perovskite depends on the dielectric layer on which it is coated. MACI and PbI2 based perovskite forms a stable film and the nucleation depends on the aging of the precursor solution. Hence by controlling of the perovskite film morphology, a high performing device can be obtained. Hence a low cost and well performing TFT is reported.

AB - Organic-inorganic perovskite has gained popularity in recent times because of its high carrier mobility, easy and low cost processing for various optoelectronic application. In this paper we have demonstrated the variation of the growth and nucleation of perovskite thin film on various dielectric layers. Thereafter we report the fabrication and characterization of perovskite FET. We propose that growth of the perovskite depends on the dielectric layer on which it is coated. MACI and PbI2 based perovskite forms a stable film and the nucleation depends on the aging of the precursor solution. Hence by controlling of the perovskite film morphology, a high performing device can be obtained. Hence a low cost and well performing TFT is reported.

KW - Annealing

KW - Dielectric

KW - Morphology

KW - Nucleation

KW - Perovskite

UR - https://www.scopus.com/pages/publications/85075831416

U2 - 10.1109/ICPEICES.2018.8897437

DO - 10.1109/ICPEICES.2018.8897437

M3 - Conference contribution

AN - SCOPUS:85075831416

T3 - 2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018

SP - 743

EP - 747

BT - 2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018

PB - Institute of Electrical and Electronics Engineers

T2 - 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018

Y2 - 22 October 2018 through 24 October 2018

ER -

Choudhury A, Dogra P, Teron B, Gupta RK, Dey A, Singh A et al. Morphology control of mixed halide perovskite for its application in low-cost thin film transistor. In 2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018. Institute of Electrical and Electronics Engineers. 2018. p. 743-747. 8897437. (2018 2nd IEEE International Conference on Power Electronics, Intelligent Control and Energy Systems, ICPEICES 2018). doi: 10.1109/ICPEICES.2018.8897437

Morphology control of mixed halide perovskite for its application in low-cost thin film transistor

Abstract

Publication series

Conference

UN SDGs

Keywords

ASJC Scopus subject areas

Access to Document

Fingerprint

Cite this