MOSFET dosimetry of an X-ray microbeam

Anatoly Rosenfeld; G.I. Kaplan; Tomas Kron; Barry Allen; Avraham Dilmanian; Itzhak Orion; B. Ren; Michael Lerch; A. Holmes-Siedle

doi:10.1109/23.819153

MOSFET dosimetry of an X-ray microbeam

Anatoly Rosenfeld, G.I. Kaplan, Tomas Kron, Barry Allen, Avraham Dilmanian, Itzhak Orion, B. Ren, Michael Lerch, A. Holmes-Siedle

Unit of Nuclear Engineering

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

A metal-oxide-semiconductor field effect transistor (MOSFET) has been used as a radiation monitor to map the profile of a variety of X-ray radiation microbeams. The present work studies the role of the topology of the MOSFET gate oxide when mapping radiation microbeams. The "edge-on" MOSFET has been introduced for microbeam mapping and the spatial resolution of the "edge-on" MOSFET is investigated. Comparison is made with other mapping techniques including, Gafchromic/sup TM/ film, radiographic film, ionization chamber. The results clearly demonstrate the superiority of the "edge-on" MOSFET when applied to mapping of narrow radiation beams. The spatial resolution of the "edge-on" MOSFET is estimated to be 1 /spl mu/m and appears to be limited by the width of the gate oxide thickness.

Original language	English
Pages (from-to)	1774-1780
Number of pages	7
Journal	Nuclear Science, IEEE Transactions on
Volume	46
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/23.819153
State	Published - 1 Jan 2000

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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Cite this

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AU - Rosenfeld, Anatoly

AU - Kaplan, G.I.

AU - Kron, Tomas

AU - Allen, Barry

AU - Dilmanian, Avraham

AU - Orion, Itzhak

AU - Ren, B.

AU - Lerch, Michael

AU - Holmes-Siedle, A.

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MOSFET dosimetry of an X-ray microbeam

Abstract

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