Multi BSF layer InGaP/GaAs high efficiency solar cell

Jivesh Verma, Pritam Dey, Ashish Prajapati, T. D. Das

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Back Surface Field layer is very much important for both single and multi-junction solar cells for controlling the recombination rate. In this work multi BSF layers are used at both top and bottom cells to get higher external quantum efficiency from the cell. The work is done taking double junction InGaP/GaAs Solar cell and the optimization of the BSF layers is done using the computational numerical modeling with Silvaco ATLAS simulation technique. The structure, photo-generation rate, thickness of BSF layers is discussed in this paper. For this optimized cell structure, the maximum available short circuit current density is 17.35 mA/cm2 and is obtained at an open circuit voltage of 2.69 V which leads to a higher conversion efficiency.

Original languageEnglish
Title of host publicationProceedings of 2017 11th International Conference on Intelligent Systems and Control, ISCO 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages278-281
Number of pages4
ISBN (Electronic)9781509027170
DOIs
StatePublished - 14 Feb 2017
Externally publishedYes
Event2017 11th International Conference on Intelligent Systems and Control, ISCO 2017 - Coimbatore, India
Duration: 5 Jan 20176 Jan 2017

Publication series

NameProceedings of 2017 11th International Conference on Intelligent Systems and Control, ISCO 2017

Conference

Conference2017 11th International Conference on Intelligent Systems and Control, ISCO 2017
Country/TerritoryIndia
CityCoimbatore
Period5/01/176/01/17

Keywords

  • Back surface field
  • External quantum Efficiency
  • Open circuit voltage
  • Short-circuit current density

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