Multi BSF layer InGaP/GaAs optimized solar cell

Jivesh Verma, Pritam Dey, Ashish Prajapati, T. D. Das

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Back Surface Field layer plays an eminent role for both single and multi-junction solar cells for controlling the recombination rate. In this work multi BSF layers are used at both top and bottom cells to get higher efficiency. The work is done taking double junction InGaP/GaAs Solar cell and augmentation of the BSF layers is done using mathematical numerical modelling with Silvaco simulator. The structure, photo-generation rate and thickness of the BSF layers is discussed in this paper. For this improved cell schematic, the enhanced available short circuit current density is 17.35 mA/cm2 which is obtained at an open circuit voltage of 2.69 V, which leads to an augmented transformation efficiency.

Original languageEnglish
Title of host publicationInternational Conference on Microelectronics, Computing and Communication, MicroCom 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467366212
DOIs
StatePublished - 25 Jul 2016
Externally publishedYes
Event2016 International Conference on Microelectronics, Computing and Communication, MicroCom 2016 - Durgapur, India
Duration: 23 Jan 201625 Jan 2016

Publication series

NameInternational Conference on Microelectronics, Computing and Communication, MicroCom 2016

Conference

Conference2016 International Conference on Microelectronics, Computing and Communication, MicroCom 2016
Country/TerritoryIndia
CityDurgapur
Period23/01/1625/01/16

Keywords

  • Back surface field
  • Open circuit voltage
  • Quantum Efficiency
  • Recombination
  • Short-circuit current density
  • Solar cells
  • tunnel junction
  • window layer

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