@inproceedings{ee2d0378ade640cb94b48dd9739c1d63,
title = "Multi BSF layer InGaP/GaAs optimized solar cell",
abstract = "Back Surface Field layer plays an eminent role for both single and multi-junction solar cells for controlling the recombination rate. In this work multi BSF layers are used at both top and bottom cells to get higher efficiency. The work is done taking double junction InGaP/GaAs Solar cell and augmentation of the BSF layers is done using mathematical numerical modelling with Silvaco simulator. The structure, photo-generation rate and thickness of the BSF layers is discussed in this paper. For this improved cell schematic, the enhanced available short circuit current density is 17.35 mA/cm2 which is obtained at an open circuit voltage of 2.69 V, which leads to an augmented transformation efficiency.",
keywords = "Back surface field, Open circuit voltage, Quantum Efficiency, Recombination, Short-circuit current density, Solar cells, tunnel junction, window layer",
author = "Jivesh Verma and Pritam Dey and Ashish Prajapati and Das, {T. D.}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 International Conference on Microelectronics, Computing and Communication, MicroCom 2016 ; Conference date: 23-01-2016 Through 25-01-2016",
year = "2016",
month = jul,
day = "25",
doi = "10.1109/MicroCom.2016.7522522",
language = "English",
series = "International Conference on Microelectronics, Computing and Communication, MicroCom 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "International Conference on Microelectronics, Computing and Communication, MicroCom 2016",
address = "United States",
}