Multiple-bandgap vertical-junction architectures for ultra-efficient concentrator solar cells

Avi Braun; Alexis Vossier; Eugene A. Katz; Nicholas J. Ekins-Daukes; Jeffrey M. Gordon

doi:10.1039/c2ee22167e

Multiple-bandgap vertical-junction architectures for ultra-efficient concentrator solar cells

Avi Braun, Alexis Vossier, Eugene A. Katz, Nicholas J. Ekins-Daukes, Jeffrey M. Gordon

The Swiss Institute for Dryland Environmental and Energy Research

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

A novel multiple-bandgap multi-terminal vertical-junction (side-illumination) architecture for concentrator solar cells is proposed and simulated, wherein each stacked sub-cell operates at its own maximum power point, without the need for tunnel diodes, current matching, lattice matching, metallization grids or spectrum splitting. Practical implementation is limited to indirect bandgap semiconductors (including Si and Ge), with a dramatic reduction in series resistance such that ultra-efficient operation at irradiance levels of thousands of suns appears tenable - rivalling in principle today's best multi-junction III-V cells.

Original language	English
Pages (from-to)	8523-8527
Number of pages	5
Journal	Energy and Environmental Science
Volume	5
Issue number	9
DOIs	https://doi.org/10.1039/c2ee22167e
State	Published - 1 Sep 2012

ASJC Scopus subject areas

Environmental Chemistry
Renewable Energy, Sustainability and the Environment
Nuclear Energy and Engineering
Pollution

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1039/c2ee22167e

Cite this

@article{05ded8c443b74a889e84d8c4121421f4,

title = "Multiple-bandgap vertical-junction architectures for ultra-efficient concentrator solar cells",

abstract = "A novel multiple-bandgap multi-terminal vertical-junction (side-illumination) architecture for concentrator solar cells is proposed and simulated, wherein each stacked sub-cell operates at its own maximum power point, without the need for tunnel diodes, current matching, lattice matching, metallization grids or spectrum splitting. Practical implementation is limited to indirect bandgap semiconductors (including Si and Ge), with a dramatic reduction in series resistance such that ultra-efficient operation at irradiance levels of thousands of suns appears tenable - rivalling in principle today's best multi-junction III-V cells.",

author = "Avi Braun and Alexis Vossier and Katz, {Eugene A.} and Ekins-Daukes, {Nicholas J.} and Gordon, {Jeffrey M.}",

year = "2012",

month = sep,

day = "1",

doi = "10.1039/c2ee22167e",

language = "English",

volume = "5",

pages = "8523--8527",

journal = "Energy and Environmental Science",

issn = "1754-5692",

publisher = "Royal Society of Chemistry",

number = "9",

}

TY - JOUR

T1 - Multiple-bandgap vertical-junction architectures for ultra-efficient concentrator solar cells

AU - Braun, Avi

AU - Vossier, Alexis

AU - Katz, Eugene A.

AU - Ekins-Daukes, Nicholas J.

AU - Gordon, Jeffrey M.

PY - 2012/9/1

Y1 - 2012/9/1

N2 - A novel multiple-bandgap multi-terminal vertical-junction (side-illumination) architecture for concentrator solar cells is proposed and simulated, wherein each stacked sub-cell operates at its own maximum power point, without the need for tunnel diodes, current matching, lattice matching, metallization grids or spectrum splitting. Practical implementation is limited to indirect bandgap semiconductors (including Si and Ge), with a dramatic reduction in series resistance such that ultra-efficient operation at irradiance levels of thousands of suns appears tenable - rivalling in principle today's best multi-junction III-V cells.

AB - A novel multiple-bandgap multi-terminal vertical-junction (side-illumination) architecture for concentrator solar cells is proposed and simulated, wherein each stacked sub-cell operates at its own maximum power point, without the need for tunnel diodes, current matching, lattice matching, metallization grids or spectrum splitting. Practical implementation is limited to indirect bandgap semiconductors (including Si and Ge), with a dramatic reduction in series resistance such that ultra-efficient operation at irradiance levels of thousands of suns appears tenable - rivalling in principle today's best multi-junction III-V cells.

UR - http://www.scopus.com/inward/record.url?scp=84865238099&partnerID=8YFLogxK

U2 - 10.1039/c2ee22167e

DO - 10.1039/c2ee22167e

M3 - Article

AN - SCOPUS:84865238099

SN - 1754-5692

VL - 5

SP - 8523

EP - 8527

JO - Energy and Environmental Science

JF - Energy and Environmental Science

IS - 9

ER -

Multiple-bandgap vertical-junction architectures for ultra-efficient concentrator solar cells

Abstract

ASJC Scopus subject areas

UN SDGs

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