N doping and al-N co-doping in sol-gel znO films: Studies of their structural, electrical, optical, and photoconductive properties

M. Dutta, T. Ghosh, D. Basak

Research output: Contribution to journalArticlepeer-review

44 Scopus citations

Abstract

We have studied the structural, electrical, optical, and optoelectronic properties of N-doped and Al-N co-doped ZnO films grown by sol-gel technique. Both the undoped and doped films have a hexagonal wurtzite-type structure. The undoped film shows a very low electron concentration. The N-doped film exhibits an anomalous conduction type, while the Al-N co-doped film shows relatively stable p-type conduction. Though the transparency in the visible region is retained in the doped films, its optical qualities are degraded as indicated by photoluminescence results. The N-doped film has better response to ultraviolet light compared with the undoped and co-doped films. These results are important for the growth and development of p-type ZnO films using the very low-cost sol-gel method.

Original languageEnglish
Pages (from-to)2335-2342
Number of pages8
JournalJournal of Electronic Materials
Volume38
Issue number11
DOIs
StatePublished - 1 Nov 2009
Externally publishedYes

Keywords

  • Al-N co-doping
  • N doping
  • P-type
  • Sol-gel
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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