Abstract
We have studied the structural, electrical, optical, and optoelectronic properties of N-doped and Al-N co-doped ZnO films grown by sol-gel technique. Both the undoped and doped films have a hexagonal wurtzite-type structure. The undoped film shows a very low electron concentration. The N-doped film exhibits an anomalous conduction type, while the Al-N co-doped film shows relatively stable p-type conduction. Though the transparency in the visible region is retained in the doped films, its optical qualities are degraded as indicated by photoluminescence results. The N-doped film has better response to ultraviolet light compared with the undoped and co-doped films. These results are important for the growth and development of p-type ZnO films using the very low-cost sol-gel method.
Original language | English |
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Pages (from-to) | 2335-2342 |
Number of pages | 8 |
Journal | Journal of Electronic Materials |
Volume | 38 |
Issue number | 11 |
DOIs | |
State | Published - 1 Nov 2009 |
Externally published | Yes |
Keywords
- Al-N co-doping
- N doping
- P-type
- Sol-gel
- ZnO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry