Nano-pendeo GaN growth of light emitting devices on silicon

Wang Nang Wang; C. Liu; A. Gott; S. Denchitcharoen; P. Shields; L. Meshi; S. Khongphetsak; I. Griffiths; D. Cherns; R. Campion

doi:10.2150/jlve.32.187

Nano-pendeo GaN growth of light emitting devices on silicon

Wang Nang Wang, C. Liu, A. Gott, S. Denchitcharoen, P. Shields, L. Meshi, S. Khongphetsak, I. Griffiths, D. Cherns, R. Campion

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This paper presents the results using an alternative defects and strain minimizing technique with nanostructures as the compliant layer to grow III-V nitrides onto foreign substrates. Defects reduction amd stress relaxation had been observed through HRTEM on GaN grown on sapphire and silicon. Results of LED devices on silicon with performance compatible with those on sapphire are presented.

Original language	English
Pages (from-to)	187-190
Number of pages	4
Journal	Journal of Light and Visual Environment
Volume	32
Issue number	2
DOIs	https://doi.org/10.2150/jlve.32.187
State	Published - 1 Dec 2008
Externally published	Yes

Keywords

GaN
Light emitting diodes
Nano-pendeo
Silicon

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.2150/jlve.32.187

Cite this

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abstract = "This paper presents the results using an alternative defects and strain minimizing technique with nanostructures as the compliant layer to grow III-V nitrides onto foreign substrates. Defects reduction amd stress relaxation had been observed through HRTEM on GaN grown on sapphire and silicon. Results of LED devices on silicon with performance compatible with those on sapphire are presented.",

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AU - Wang, Wang Nang

AU - Liu, C.

AU - Gott, A.

AU - Denchitcharoen, S.

AU - Shields, P.

AU - Meshi, L.

AU - Khongphetsak, S.

AU - Griffiths, I.

AU - Cherns, D.

AU - Campion, R.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - This paper presents the results using an alternative defects and strain minimizing technique with nanostructures as the compliant layer to grow III-V nitrides onto foreign substrates. Defects reduction amd stress relaxation had been observed through HRTEM on GaN grown on sapphire and silicon. Results of LED devices on silicon with performance compatible with those on sapphire are presented.

AB - This paper presents the results using an alternative defects and strain minimizing technique with nanostructures as the compliant layer to grow III-V nitrides onto foreign substrates. Defects reduction amd stress relaxation had been observed through HRTEM on GaN grown on sapphire and silicon. Results of LED devices on silicon with performance compatible with those on sapphire are presented.

KW - GaN

KW - Light emitting diodes

KW - Nano-pendeo

KW - Silicon

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DO - 10.2150/jlve.32.187

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JO - Journal of Light and Visual Environment

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ER -

Nano-pendeo GaN growth of light emitting devices on silicon

Abstract

Keywords

ASJC Scopus subject areas

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