Nanometric diamond delta doping with boron

James E. Butler, Anatoly Vikharev, Alexei Gorbachev, Mikhail Lobaev, Anatoly Muchnikov, Dmitry Radischev, Vladimir Isaev, Valerii Chernov, Sergey Bogdanov, Mikail Drozdov, Evgeniy Demidov, Ekaterina Surovegina, Vladimir Shashkin, Albert Davidov, Haiyan Tan, Louisa Meshi, Alexander C. Pakpour-Tabrizi, Marie Laure Hicks, Richard B. Jackman

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

Diamond is desired for active semiconducting device because of it high carrier mobility, high voltage breakdown resistance, and high thermal diffusivity. Exploiting diamond as a semiconductor is hampered by the lack of shallow dopants to create sufficient electronic carriers at room temperature. In this work, nanometer thick, heavily boron doped epitaxial diamond ‘delta doped’ layers have been grown on ultra smooth diamond surfaces which demonstrate p type conduction with enhanced Hall mobilities of up to 120 cm2/Vs and sheet carrier concentrations to 6 × 1013 cm–2, thus enabling a new class of active diamond electronic devices. (

Original languageEnglish
Article number1600329
JournalPhysica Status Solidi - Rapid Research Letters
Volume11
Issue number1
DOIs
StatePublished - 1 Jan 2017

Keywords

  • Hall effect
  • boron
  • carrier mobility
  • delta doping
  • diamond
  • growth

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