Nanosecond magnetic relaxation processes in ultrathin metallic films prepared by MBE

R. Urban; B. Heinrich; G. Woltersdorf; K. Ajdari; K. Myrtle; J. F. Cochran; E. Rozenberg

doi:10.1103/PhysRevB.65.020402

Nanosecond magnetic relaxation processes in ultrathin metallic films prepared by MBE

R. Urban, B. Heinrich, G. Woltersdorf, K. Ajdari, K. Myrtle, J. F. Cochran, E. Rozenberg

Department of Physics

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

Magnetic relaxation processes were investigated by ferromagnetic resonance (FMR) using crystalline Cr/ Fe/GaAs(001) ultrathin film structures grown by molecular beam epitaxy (MBE). For Fe films thicker than 1.5 nm the extrinsic relaxation term showed evidence of two magnon scattering. Above 10 GHz the in-plane FMR linewidth was linearly dependent on the microwave frequency with an appreciable zero-frequency offset. The zero frequency offset measures the strength of extrinsic damping. The in-plane Gilbert damping includes both the intrinsic and extrinsic Gilbert contributions in qualitative agreement with recent predictions by Arias and Mills.

Original language	English
Article number	020402
Pages (from-to)	204021-204024
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	65
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevB.65.020402
State	Published - 1 Jan 2002

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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AU - Urban, R.

AU - Heinrich, B.

AU - Woltersdorf, G.

AU - Ajdari, K.

AU - Myrtle, K.

AU - Cochran, J. F.

AU - Rozenberg, E.

PY - 2002/1/1

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N2 - Magnetic relaxation processes were investigated by ferromagnetic resonance (FMR) using crystalline Cr/ Fe/GaAs(001) ultrathin film structures grown by molecular beam epitaxy (MBE). For Fe films thicker than 1.5 nm the extrinsic relaxation term showed evidence of two magnon scattering. Above 10 GHz the in-plane FMR linewidth was linearly dependent on the microwave frequency with an appreciable zero-frequency offset. The zero frequency offset measures the strength of extrinsic damping. The in-plane Gilbert damping includes both the intrinsic and extrinsic Gilbert contributions in qualitative agreement with recent predictions by Arias and Mills.

AB - Magnetic relaxation processes were investigated by ferromagnetic resonance (FMR) using crystalline Cr/ Fe/GaAs(001) ultrathin film structures grown by molecular beam epitaxy (MBE). For Fe films thicker than 1.5 nm the extrinsic relaxation term showed evidence of two magnon scattering. Above 10 GHz the in-plane FMR linewidth was linearly dependent on the microwave frequency with an appreciable zero-frequency offset. The zero frequency offset measures the strength of extrinsic damping. The in-plane Gilbert damping includes both the intrinsic and extrinsic Gilbert contributions in qualitative agreement with recent predictions by Arias and Mills.

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JF - Physical Review B - Condensed Matter and Materials Physics

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ER -

Nanosecond magnetic relaxation processes in ultrathin metallic films prepared by MBE

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