Near-infrared cathodoluminescence imaging of defect distributions in In0.2Ga0.8As/GaAs multiple quantum wells grown on prepatterned GaAs

D. H. Rich; K. C. Rajkumar; Li Chen; A. Madhukar; F. J. Grunthaner

doi:10.1063/1.108225

Near-infrared cathodoluminescence imaging of defect distributions in In_0.2Ga_0.8As/GaAs multiple quantum wells grown on prepatterned GaAs

D. H. Rich, K. C. Rajkumar, Li Chen, A. Madhukar, F. J. Grunthaner

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The defect distribution in a highly strained In_0.2Ga _0.8As/GaAs multiple-quantum-well (MQW) structure grown on a patterned GaAs substrate is examined with cathodoluminescence imaging and spectroscopy in the near infrared. By spatially correlating the luminescence arising from the MQW exciton recombination (λ≊950 nm) with the longer wavelength (1000≲λ≲1200 nm) luminescence arising from the defect-induced recombination, we demonstrate that it is possible to determine the regions of highest film quality in both the mesa and valley regions. The present approach enables a judicious determination of the optimal regions to be used for active pixels in InGaAs/GaAs spatial light modulators.

Original language	English
Pages (from-to)	222-224
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	2
DOIs	https://doi.org/10.1063/1.108225
State	Published - 1 Jan 1992
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{4f364a40399d414880e751b14c9f2508,

title = "Near-infrared cathodoluminescence imaging of defect distributions in In0.2Ga0.8As/GaAs multiple quantum wells grown on prepatterned GaAs",

abstract = "The defect distribution in a highly strained In0.2Ga 0.8As/GaAs multiple-quantum-well (MQW) structure grown on a patterned GaAs substrate is examined with cathodoluminescence imaging and spectroscopy in the near infrared. By spatially correlating the luminescence arising from the MQW exciton recombination (λ≊950 nm) with the longer wavelength (1000≲λ≲1200 nm) luminescence arising from the defect-induced recombination, we demonstrate that it is possible to determine the regions of highest film quality in both the mesa and valley regions. The present approach enables a judicious determination of the optimal regions to be used for active pixels in InGaAs/GaAs spatial light modulators.",

author = "Rich, {D. H.} and Rajkumar, {K. C.} and Li Chen and A. Madhukar and Grunthaner, {F. J.}",

year = "1992",

month = jan,

day = "1",

doi = "10.1063/1.108225",

language = "English",

volume = "61",

pages = "222--224",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Near-infrared cathodoluminescence imaging of defect distributions in In0.2Ga0.8As/GaAs multiple quantum wells grown on prepatterned GaAs

AU - Rich, D. H.

AU - Rajkumar, K. C.

AU - Chen, Li

AU - Madhukar, A.

AU - Grunthaner, F. J.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - The defect distribution in a highly strained In0.2Ga 0.8As/GaAs multiple-quantum-well (MQW) structure grown on a patterned GaAs substrate is examined with cathodoluminescence imaging and spectroscopy in the near infrared. By spatially correlating the luminescence arising from the MQW exciton recombination (λ≊950 nm) with the longer wavelength (1000≲λ≲1200 nm) luminescence arising from the defect-induced recombination, we demonstrate that it is possible to determine the regions of highest film quality in both the mesa and valley regions. The present approach enables a judicious determination of the optimal regions to be used for active pixels in InGaAs/GaAs spatial light modulators.

AB - The defect distribution in a highly strained In0.2Ga 0.8As/GaAs multiple-quantum-well (MQW) structure grown on a patterned GaAs substrate is examined with cathodoluminescence imaging and spectroscopy in the near infrared. By spatially correlating the luminescence arising from the MQW exciton recombination (λ≊950 nm) with the longer wavelength (1000≲λ≲1200 nm) luminescence arising from the defect-induced recombination, we demonstrate that it is possible to determine the regions of highest film quality in both the mesa and valley regions. The present approach enables a judicious determination of the optimal regions to be used for active pixels in InGaAs/GaAs spatial light modulators.

UR - http://www.scopus.com/inward/record.url?scp=1542306082&partnerID=8YFLogxK

U2 - 10.1063/1.108225

DO - 10.1063/1.108225

M3 - Article

AN - SCOPUS:1542306082

SN - 0003-6951

VL - 61

SP - 222

EP - 224

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Near-infrared cathodoluminescence imaging of defect distributions in In_0.2Ga_0.8As/GaAs multiple quantum wells grown on prepatterned GaAs

Abstract

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