Near-Infrared photodetectors based on 2D Bi2S3

Basant Chitara; Bhargava S.C. Kolli; Fei Yan

doi:10.1016/j.cplett.2022.139876

Near-Infrared photodetectors based on 2D Bi₂S₃

Basant Chitara, Bhargava S.C. Kolli, Fei Yan

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Herein, we report for the first time, the chemical vapor deposition of 2D bismuth sulfide (Bi₂S₃₎. The 2D Bi₂S₃-based field-effect transistor showed an n-type electron mobility of 12.5 cm^-2V^-1s⁻¹ with an on/off ratio of 10. Under 785 nm illumination, the 2D Bi₂S₃-based photodetector exhibited a photo responsivity of 16 AW⁻¹, an external quantum efficiency of 2500%, a detectivity in the order of 10¹⁰ Jones and a linear dynamic range of 35 dB with a fast response time of 100 ms. Our results suggest that Bi₂S₃ could be a promising new 2D material for the next-generation electronic and optoelectronic devices.

Original language	English
Article number	139876
Journal	Chemical Physics Letters
Volume	804
DOIs	https://doi.org/10.1016/j.cplett.2022.139876
State	Published - 1 Oct 2022
Externally published	Yes

Keywords

2D BiS
CVD
NIR photodetectors

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

Access to Document

10.1016/j.cplett.2022.139876

Cite this

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title = "Near-Infrared photodetectors based on 2D Bi2S3",

abstract = "Herein, we report for the first time, the chemical vapor deposition of 2D bismuth sulfide (Bi2S3). The 2D Bi2S3-based field-effect transistor showed an n-type electron mobility of 12.5 cm-2V-1s−1 with an on/off ratio of 10. Under 785 nm illumination, the 2D Bi2S3-based photodetector exhibited a photo responsivity of 16 AW−1, an external quantum efficiency of 2500%, a detectivity in the order of 1010 Jones and a linear dynamic range of 35 dB with a fast response time of 100 ms. Our results suggest that Bi2S3 could be a promising new 2D material for the next-generation electronic and optoelectronic devices.",

keywords = "2D BiS, CVD, NIR photodetectors",

author = "Basant Chitara and Kolli, {Bhargava S.C.} and Fei Yan",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

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doi = "10.1016/j.cplett.2022.139876",

language = "English",

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TY - JOUR

T1 - Near-Infrared photodetectors based on 2D Bi2S3

AU - Chitara, Basant

AU - Kolli, Bhargava S.C.

AU - Yan, Fei

PY - 2022/10/1

Y1 - 2022/10/1

N2 - Herein, we report for the first time, the chemical vapor deposition of 2D bismuth sulfide (Bi2S3). The 2D Bi2S3-based field-effect transistor showed an n-type electron mobility of 12.5 cm-2V-1s−1 with an on/off ratio of 10. Under 785 nm illumination, the 2D Bi2S3-based photodetector exhibited a photo responsivity of 16 AW−1, an external quantum efficiency of 2500%, a detectivity in the order of 1010 Jones and a linear dynamic range of 35 dB with a fast response time of 100 ms. Our results suggest that Bi2S3 could be a promising new 2D material for the next-generation electronic and optoelectronic devices.

AB - Herein, we report for the first time, the chemical vapor deposition of 2D bismuth sulfide (Bi2S3). The 2D Bi2S3-based field-effect transistor showed an n-type electron mobility of 12.5 cm-2V-1s−1 with an on/off ratio of 10. Under 785 nm illumination, the 2D Bi2S3-based photodetector exhibited a photo responsivity of 16 AW−1, an external quantum efficiency of 2500%, a detectivity in the order of 1010 Jones and a linear dynamic range of 35 dB with a fast response time of 100 ms. Our results suggest that Bi2S3 could be a promising new 2D material for the next-generation electronic and optoelectronic devices.

KW - 2D BiS

KW - CVD

KW - NIR photodetectors

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