Near-Infrared photodetectors based on 2D Bi2S3

Basant Chitara, Bhargava S.C. Kolli, Fei Yan

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Herein, we report for the first time, the chemical vapor deposition of 2D bismuth sulfide (Bi2S3). The 2D Bi2S3-based field-effect transistor showed an n-type electron mobility of 12.5 cm-2V-1s−1 with an on/off ratio of 10. Under 785 nm illumination, the 2D Bi2S3-based photodetector exhibited a photo responsivity of 16 AW−1, an external quantum efficiency of 2500%, a detectivity in the order of 1010 Jones and a linear dynamic range of 35 dB with a fast response time of 100 ms. Our results suggest that Bi2S3 could be a promising new 2D material for the next-generation electronic and optoelectronic devices.

Original languageEnglish
Article number139876
JournalChemical Physics Letters
Volume804
DOIs
StatePublished - 1 Oct 2022
Externally publishedYes

Keywords

  • 2D BiS
  • CVD
  • NIR photodetectors

ASJC Scopus subject areas

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry

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