Negative differential resistance in GaN nanocrystals above room temperature

Basant Chitara, D. S. Ivan Jebakumar, C. N.R. Rao, S. B. Krupanidhi

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current-voltage characteristics have been used to investigate this effect through a metal-semiconductor-metal (M-S-M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is ∼7V above room temperature.

Original languageEnglish
Article number405205
Issue number40
StatePublished - 12 Oct 2009
Externally publishedYes

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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