Negative differential resistance in GaN nanocrystals above room temperature

Basant Chitara; D. S. Ivan Jebakumar; C. N.R. Rao; S. B. Krupanidhi

doi:10.1088/0957-4484/20/40/405205

Negative differential resistance in GaN nanocrystals above room temperature

Basant Chitara, D. S. Ivan Jebakumar, C. N.R. Rao, S. B. Krupanidhi

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current-voltage characteristics have been used to investigate this effect through a metal-semiconductor-metal (M-S-M) configuration on SiO₂. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is ∼7V above room temperature.

Original language	English
Article number	405205
Journal	Nanotechnology
Volume	20
Issue number	40
DOIs	https://doi.org/10.1088/0957-4484/20/40/405205
State	Published - 12 Oct 2009
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
Chemistry (all)
Materials Science (all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/20/40/405205

Cite this

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abstract = "Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current-voltage characteristics have been used to investigate this effect through a metal-semiconductor-metal (M-S-M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is ∼7V above room temperature.",

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AU - Rao, C. N.R.

AU - Krupanidhi, S. B.

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N2 - Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current-voltage characteristics have been used to investigate this effect through a metal-semiconductor-metal (M-S-M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is ∼7V above room temperature.

AB - Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current-voltage characteristics have been used to investigate this effect through a metal-semiconductor-metal (M-S-M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is ∼7V above room temperature.

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Negative differential resistance in GaN nanocrystals above room temperature

Abstract

ASJC Scopus subject areas

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