NEGATIVE RESISTANCE IN TRANSISTORS OPERATED IN THE COMMON BASE AVALANCHE MULTIPLICATION MODEL.

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Abstract

The conditions for the formation of current-controllable negative differential resistance (CCNR) and actual negative resistance characteristics in the input terminals of common base transistor circuits are discussed. Analysis of a linear approximation to the characteristics leads to a discussion of the effects of internal and external resistances and the difference between theoretical and practical results. A conclusion is deanw as to how the transistor parameters and the external circuit influence the device characteristic.

Original languageEnglish
Pages (from-to)27-32
Number of pages6
JournalMicroelectronics Journal
Volume9
Issue number4
StatePublished - 1 Jan 1979

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