Neutron irradiation-induced enhancement of electronic carrier transport in ZnO

E. Flitsiyan; C. Schwarz; L. Chernyak; R. E. Peale; Z. Dashevsky; W. Vernetson

doi:10.1080/10420150.2010.507672

Neutron irradiation-induced enhancement of electronic carrier transport in ZnO

E. Flitsiyan, C. Schwarz, L. Chernyak, R. E. Peale, Z. Dashevsky, W. Vernetson

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Irradiation of ZnO single crystals by thermal neutrons with a dose up to 7 × 10¹⁷cm^-2 and subsequent annealing at 400°C for 1h leads to a significant increase in majority carrier mobility and concentration in this material, with the corresponding decrease of its sheet resistance. Additionally, cathodoluminescence spectra taken before and after neutron irradiation are consistent with the growing carrier lifetime. The observed effects are attributed to irradiation-induced formation of electrically active species of interstitial Zn and improvement of lattice crystallinity due to annealing.

Original language	English
Pages (from-to)	104-108
Number of pages	5
Journal	Radiation Effects and Defects in Solids
Volume	166
Issue number	2
DOIs	https://doi.org/10.1080/10420150.2010.507672
State	Published - 1 Feb 2011

Keywords

carrier mobility
cathodoluminescence
neutron irradiation
zinc oxide

ASJC Scopus subject areas

Radiation
Nuclear and High Energy Physics
General Materials Science
Condensed Matter Physics

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10.1080/10420150.2010.507672

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title = "Neutron irradiation-induced enhancement of electronic carrier transport in ZnO",

abstract = "Irradiation of ZnO single crystals by thermal neutrons with a dose up to 7 × 1017cm-2 and subsequent annealing at 400°C for 1h leads to a significant increase in majority carrier mobility and concentration in this material, with the corresponding decrease of its sheet resistance. Additionally, cathodoluminescence spectra taken before and after neutron irradiation are consistent with the growing carrier lifetime. The observed effects are attributed to irradiation-induced formation of electrically active species of interstitial Zn and improvement of lattice crystallinity due to annealing.",

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note = "Funding Information: This research was supported in part by NSF (ECCS #0900971), NATO (CLG #983122) and US-Israel BSF (award #2008328).",

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AU - Schwarz, C.

AU - Chernyak, L.

AU - Peale, R. E.

AU - Dashevsky, Z.

AU - Vernetson, W.

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N2 - Irradiation of ZnO single crystals by thermal neutrons with a dose up to 7 × 1017cm-2 and subsequent annealing at 400°C for 1h leads to a significant increase in majority carrier mobility and concentration in this material, with the corresponding decrease of its sheet resistance. Additionally, cathodoluminescence spectra taken before and after neutron irradiation are consistent with the growing carrier lifetime. The observed effects are attributed to irradiation-induced formation of electrically active species of interstitial Zn and improvement of lattice crystallinity due to annealing.

AB - Irradiation of ZnO single crystals by thermal neutrons with a dose up to 7 × 1017cm-2 and subsequent annealing at 400°C for 1h leads to a significant increase in majority carrier mobility and concentration in this material, with the corresponding decrease of its sheet resistance. Additionally, cathodoluminescence spectra taken before and after neutron irradiation are consistent with the growing carrier lifetime. The observed effects are attributed to irradiation-induced formation of electrically active species of interstitial Zn and improvement of lattice crystallinity due to annealing.

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Neutron irradiation-induced enhancement of electronic carrier transport in ZnO

Abstract

Keywords

ASJC Scopus subject areas

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