Neutron irradiation-induced enhancement of electronic carrier transport in ZnO

E. Flitsiyan, C. Schwarz, L. Chernyak, R. E. Peale, Z. Dashevsky, W. Vernetson

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Irradiation of ZnO single crystals by thermal neutrons with a dose up to 7 × 1017cm-2 and subsequent annealing at 400°C for 1h leads to a significant increase in majority carrier mobility and concentration in this material, with the corresponding decrease of its sheet resistance. Additionally, cathodoluminescence spectra taken before and after neutron irradiation are consistent with the growing carrier lifetime. The observed effects are attributed to irradiation-induced formation of electrically active species of interstitial Zn and improvement of lattice crystallinity due to annealing.

Original languageEnglish
Pages (from-to)104-108
Number of pages5
JournalRadiation Effects and Defects in Solids
Issue number2
StatePublished - 1 Feb 2011


  • carrier mobility
  • cathodoluminescence
  • neutron irradiation
  • zinc oxide


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