Neutron transmutation doping and radiation hardness for solution-grown bulk and nano-structured ZnO

E. Flitsiyan, C. Swartz, R. E. Peale, O. Lupan, L. Chernyak, L. Chow, W. G. Vernetson, Z. Dashevsky

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations

Abstract

It is shown that solution-grown ZnO nanostructures exhibit enhanced radiation hardness against neutron irradiation as compared to bulk material. The decrease of the cathodoluminescence intensity after irradiation at a neutron dose of 6 x 1016 cm2 in ZnO nanostructure is nearly identical to that induced by a dose of 1.5 x 1014 cm2 in bulk material. The damage introduced by irradiation is shown to change the nature of electronic transitions responsible for luminescence. The change of excitonic luminescence to the luminescence related to the tailing of the density of states caused by potential fluctuations occurs at an irradiation dose around 6x10'6 cm2 and 5x1014 cm2 in nanostructured and bulk materials, respectively. Hall measurements before and after annealing determined the effect of dose on resistance, mobility, and carrier concentration. Annealing decreased the sheet resistance, increased the mobility, and increased carrier concentration for all doses. While the concentration of carriers in the control sample increased 200-fold after annealing, the increase was -l0O0-fold for the irradiated samples. Annealed irradiated samples showed a maximum carrier concentration increase of about 60x over the unirradiated sample. Interestingly, neutron irradiation increased the mobility even in the un-annealed samples.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices
Pages55-60
Number of pages6
StatePublished - 25 Sep 2009
EventPerformance and Reliability of Semiconductor Devices - Boston, MA, United States
Duration: 30 Nov 20083 Dec 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1108
ISSN (Print)0272-9172

Conference

ConferencePerformance and Reliability of Semiconductor Devices
Country/TerritoryUnited States
CityBoston, MA
Period30/11/083/12/08

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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