TY - JOUR
T1 - New types of microlens arrays for the IR based on inorganic chalcogenide photoresists
AU - Eisenberg, N. P.
AU - Manevich, M.
AU - Noach, S.
AU - Klebanov, M.
AU - Lyubin, V.
N1 - Funding Information:
This research program was supported by a grant from the Israeli Ministry of Science.
PY - 2000/10/1
Y1 - 2000/10/1
N2 - Chalcogenide (ChG) glassy films possess properties of IR transparent (0.8-12 μm) glasses with high values of refractive index (2.3-3.3) and are also effective photoresists with very high resolution (>104 lines/mm). Using ChG photoresists, a simple technology can be developed for the fabrication of IR microlens arrays (MA), a growing application in modern optoelectronics. Due to their optical properties, the ChG glasses can be used in numerous applications as the final material for the MA; therefore reactive ion etching generally used for transferring the MA to a substrate material, can be eliminated. Three different methods of MA fabrication are discussed. In the first method As-Se photoresists with a negative developer and proximity lithography are used. In the second method, As-S photoresists with a positive developer and half-tone photomasks are used. The third method, including a stage of thermal reflow, uses low-melting As-Se-I ChG films developed for this purpose. This can result in lens thicknesses greater than that using either of the first two methods.
AB - Chalcogenide (ChG) glassy films possess properties of IR transparent (0.8-12 μm) glasses with high values of refractive index (2.3-3.3) and are also effective photoresists with very high resolution (>104 lines/mm). Using ChG photoresists, a simple technology can be developed for the fabrication of IR microlens arrays (MA), a growing application in modern optoelectronics. Due to their optical properties, the ChG glasses can be used in numerous applications as the final material for the MA; therefore reactive ion etching generally used for transferring the MA to a substrate material, can be eliminated. Three different methods of MA fabrication are discussed. In the first method As-Se photoresists with a negative developer and proximity lithography are used. In the second method, As-S photoresists with a positive developer and half-tone photomasks are used. The third method, including a stage of thermal reflow, uses low-melting As-Se-I ChG films developed for this purpose. This can result in lens thicknesses greater than that using either of the first two methods.
UR - http://www.scopus.com/inward/record.url?scp=0034290873&partnerID=8YFLogxK
U2 - 10.1016/S1369-8001(00)00071-8
DO - 10.1016/S1369-8001(00)00071-8
M3 - Article
AN - SCOPUS:0034290873
SN - 1369-8001
VL - 3
SP - 443
EP - 448
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
IS - 5-6
ER -