Abstract
The noise properties of a digitally modulated millimeter wave source based on an InGaAs bipolar heterojunction photo transistor are examined. First, the photo HBT is examined as a detector and carrier to noise ratios (CNR) are calculated in the presence of all common noise sources. Second, the noise accompanying digital modulation of the photo mixing product is addressed.
| Original language | English |
|---|---|
| Pages (from-to) | 322-323 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 1 |
| State | Published - 1 Dec 2000 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering