Noise properties of a digitally modulated millimeter wave source based on an InGaAs/InP bipolar heterojunction photo transistor placed in an optically amplified system

Alberto Bilenca, Jacob Lasri, Gadi Eisenstein, Dan Ritter

Research output: Contribution to journalConference articlepeer-review

Abstract

The noise properties of a digitally modulated millimeter wave source based on an InGaAs bipolar heterojunction photo transistor are examined. First, the photo HBT is examined as a detector and carrier to noise ratios (CNR) are calculated in the presence of all common noise sources. Second, the noise accompanying digital modulation of the photo mixing product is addressed.

Original languageEnglish
Pages (from-to)322-323
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
StatePublished - 1 Dec 2000
Externally publishedYes

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