Non-coplanar reciprocal space mapping of In0.2Ga0.8As/GaAs multilayer: Modelling of the composition and strain distribution

D. Mogilyanski; E. Gartstein

doi:10.1088/0022-3727/36/10A/337

Non-coplanar reciprocal space mapping of In_0.2Ga_0.8As/GaAs multilayer: Modelling of the composition and strain distribution

D. Mogilyanski
, E. Gartstein

Research output: Contribution to journal › Article › peer-review

Abstract

Reciprocal space mapping in non-coplanar diffraction geometry using a triple-crystal diffractometer is applied to study strained In_0.2Ga_0.8As/GaAs multilayer. The modelling accounts for the measured integrated intensities of the satellites in the simulation of the reciprocal space map to provide compositional profile of In distribution in the nucleated islands on the interfaces. Theoretical approach to calculate the intensity in this unconventional geometry is discussed.

Original language	English
Pages (from-to)	A181-A187
Journal	Journal of Physics D: Applied Physics
Volume	36
Issue number	10 A
DOIs	https://doi.org/10.1088/0022-3727/36/10A/337
State	Published - 21 May 2003

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/36/10A/337

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AB - Reciprocal space mapping in non-coplanar diffraction geometry using a triple-crystal diffractometer is applied to study strained In0.2Ga0.8As/GaAs multilayer. The modelling accounts for the measured integrated intensities of the satellites in the simulation of the reciprocal space map to provide compositional profile of In distribution in the nucleated islands on the interfaces. Theoretical approach to calculate the intensity in this unconventional geometry is discussed.

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Non-coplanar reciprocal space mapping of In_0.2Ga_0.8As/GaAs multilayer: Modelling of the composition and strain distribution

Abstract

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