Non-Gaussian dark current noise in p -type quantum-well infrared photodetectors

Y. Paltiel; N. Snapi; A. Zussman; G. Jung

doi:10.1063/1.2138787

Non-Gaussian dark current noise in p -type quantum-well infrared photodetectors

Y. Paltiel, N. Snapi, A. Zussman, G. Jung

Department of Physics

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7 Scopus citations

Abstract

Bias-dependent non-Gaussian dark current noise has been observed in p -type quantum-well infrared photodetectors. Time domain analysis of the noise revealed two-level telegraphlike fluctuations with exponentially distributed lifetimes that change dramatically with changing bias. The nature of the non-Gaussian fluctuations at intermediate voltages is ascribed to switching between two electric-field distributions corresponding to distinct tunneling probabilities out of the quantum wells. The finite transition time between the levels is identified with the recharging time.

Original language	English
Article number	231103
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	23
DOIs	https://doi.org/10.1063/1.2138787
State	Published - 12 Dec 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2138787

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title = "Non-Gaussian dark current noise in p -type quantum-well infrared photodetectors",

abstract = "Bias-dependent non-Gaussian dark current noise has been observed in p -type quantum-well infrared photodetectors. Time domain analysis of the noise revealed two-level telegraphlike fluctuations with exponentially distributed lifetimes that change dramatically with changing bias. The nature of the non-Gaussian fluctuations at intermediate voltages is ascribed to switching between two electric-field distributions corresponding to distinct tunneling probabilities out of the quantum wells. The finite transition time between the levels is identified with the recharging time.",

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N2 - Bias-dependent non-Gaussian dark current noise has been observed in p -type quantum-well infrared photodetectors. Time domain analysis of the noise revealed two-level telegraphlike fluctuations with exponentially distributed lifetimes that change dramatically with changing bias. The nature of the non-Gaussian fluctuations at intermediate voltages is ascribed to switching between two electric-field distributions corresponding to distinct tunneling probabilities out of the quantum wells. The finite transition time between the levels is identified with the recharging time.

AB - Bias-dependent non-Gaussian dark current noise has been observed in p -type quantum-well infrared photodetectors. Time domain analysis of the noise revealed two-level telegraphlike fluctuations with exponentially distributed lifetimes that change dramatically with changing bias. The nature of the non-Gaussian fluctuations at intermediate voltages is ascribed to switching between two electric-field distributions corresponding to distinct tunneling probabilities out of the quantum wells. The finite transition time between the levels is identified with the recharging time.

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Non-Gaussian dark current noise in p -type quantum-well infrared photodetectors

Abstract

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