The properties of non-linear inorganic chalcogenide photoresists fabricated by co-evaporation of Ag with amorphous arsenic sulfide-selenide materials are considered in detail. The influence of several factors, including Ag concentration, irradiation wavelength and composition of the developer on the photoresists characteristics was studied. Superlinear dissolution characteristics of the photoresists are explained in the frame of the so-called "percolation approach". The advantages of superlinear photoresists, especially for the case of maskless photolithography, are briefly discussed.
|Number of pages||6|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - 1 Oct 2009|
ASJC Scopus subject areas
- Chemistry (all)
- Materials Science (all)