Non-linear dissolution of amorphous arsenic sulfide-selenide photoresist films

V. Lyubin; A. Arsh; M. Klebanov; M. Manevich; J. Varshal; R. Dror; B. Sfez; A. V. Latyshev; D. A. Nasimov; N. P. Eisenberg

doi:10.1007/s00339-009-5337-5

Non-linear dissolution of amorphous arsenic sulfide-selenide photoresist films

V. Lyubin, A. Arsh, M. Klebanov, M. Manevich, J. Varshal, R. Dror, B. Sfez, A. V. Latyshev, D. A. Nasimov, N. P. Eisenberg

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The properties of non-linear inorganic chalcogenide photoresists fabricated by co-evaporation of Ag with amorphous arsenic sulfide-selenide materials are considered in detail. The influence of several factors, including Ag concentration, irradiation wavelength and composition of the developer on the photoresists characteristics was studied. Superlinear dissolution characteristics of the photoresists are explained in the frame of the so-called "percolation approach". The advantages of superlinear photoresists, especially for the case of maskless photolithography, are briefly discussed.

Original language	English
Pages (from-to)	109-114
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	97
Issue number	1
DOIs	https://doi.org/10.1007/s00339-009-5337-5
State	Published - 1 Oct 2009

ASJC Scopus subject areas

Chemistry (all)
Materials Science (all)

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title = "Non-linear dissolution of amorphous arsenic sulfide-selenide photoresist films",

abstract = "The properties of non-linear inorganic chalcogenide photoresists fabricated by co-evaporation of Ag with amorphous arsenic sulfide-selenide materials are considered in detail. The influence of several factors, including Ag concentration, irradiation wavelength and composition of the developer on the photoresists characteristics was studied. Superlinear dissolution characteristics of the photoresists are explained in the frame of the so-called {"}percolation approach{"}. The advantages of superlinear photoresists, especially for the case of maskless photolithography, are briefly discussed.",

author = "V. Lyubin and A. Arsh and M. Klebanov and M. Manevich and J. Varshal and R. Dror and B. Sfez and Latyshev, {A. V.} and Nasimov, {D. A.} and Eisenberg, {N. P.}",

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AU - Lyubin, V.

AU - Arsh, A.

AU - Klebanov, M.

AU - Manevich, M.

AU - Varshal, J.

AU - Dror, R.

AU - Sfez, B.

AU - Latyshev, A. V.

AU - Nasimov, D. A.

AU - Eisenberg, N. P.

PY - 2009/10/1

Y1 - 2009/10/1

N2 - The properties of non-linear inorganic chalcogenide photoresists fabricated by co-evaporation of Ag with amorphous arsenic sulfide-selenide materials are considered in detail. The influence of several factors, including Ag concentration, irradiation wavelength and composition of the developer on the photoresists characteristics was studied. Superlinear dissolution characteristics of the photoresists are explained in the frame of the so-called "percolation approach". The advantages of superlinear photoresists, especially for the case of maskless photolithography, are briefly discussed.

AB - The properties of non-linear inorganic chalcogenide photoresists fabricated by co-evaporation of Ag with amorphous arsenic sulfide-selenide materials are considered in detail. The influence of several factors, including Ag concentration, irradiation wavelength and composition of the developer on the photoresists characteristics was studied. Superlinear dissolution characteristics of the photoresists are explained in the frame of the so-called "percolation approach". The advantages of superlinear photoresists, especially for the case of maskless photolithography, are briefly discussed.

UR - http://www.scopus.com/inward/record.url?scp=69549107633&partnerID=8YFLogxK

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VL - 97

SP - 109

EP - 114

JO - Applied Physics

JF - Applied Physics

IS - 1

ER -

Non-linear dissolution of amorphous arsenic sulfide-selenide photoresist films

Abstract

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