Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

A. Pesach, E. Gross, C.-Y. Huang, Y.-D. Lin, A. Vardi, S. E. Schacham, S. Nakamura, G. Bahir

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown by metal organic chemical vapor deposition and exhibit TM-polarized photocurrent at peak wavelengths of 7.5 and 9.3 μm at temperature of 14 K. Based on the experimental data of intersubband and interband transition energies and 8-band k . p Schrödinger-Poisson solver calculations, we were able to estimate the conduction band offset to valence band offset discontinuity ratio (ΔEc:ΔEv) of 57:43 for In0.1Ga0.9N/GaN and 55:45, for In0.095GA0.905N/Al0.07Ga0.93N non-polar m-plane multi-quantum well structures.
Original languageEnglish
Pages (from-to)22110
JournalApplied Physics Letters
Volume103
Issue number2
DOIs
StatePublished - 1 Jul 2013
Externally publishedYes

Keywords

  • aluminium compounds
  • conduction bands
  • gallium compounds
  • III-V semiconductors
  • indium compounds
  • infrared detectors
  • k.p calculations
  • MOCVD
  • photoconductivity
  • photodetectors
  • Poisson equation
  • Schrodinger equation
  • semiconductor growth
  • semiconductor quantum wells
  • valence bands
  • wide band gap semiconductors
  • Photodetectors

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