Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

A. Pesach; E. Gross; C.-Y. Huang; Y.-D. Lin; A. Vardi; S. E. Schacham; S. Nakamura; G. Bahir

doi:10.1063/1.4813395

Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

A. Pesach, E. Gross, C.-Y. Huang, Y.-D. Lin, A. Vardi, S. E. Schacham, S. Nakamura, G. Bahir

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown by metal organic chemical vapor deposition and exhibit TM-polarized photocurrent at peak wavelengths of 7.5 and 9.3 μm at temperature of 14 K. Based on the experimental data of intersubband and interband transition energies and 8-band k . p Schrödinger-Poisson solver calculations, we were able to estimate the conduction band offset to valence band offset discontinuity ratio (ΔEc:ΔEv) of 57:43 for In0.1Ga0.9N/GaN and 55:45, for In0.095GA0.905N/Al0.07Ga0.93N non-polar m-plane multi-quantum well structures.

Original language	English GB
Article number	022110
Pages (from-to)	22110
Journal	Applied Physics Letters
Volume	103
Issue number	2
DOIs	https://doi.org/10.1063/1.4813395
State	Published - 1 Jul 2013
Externally published	Yes

Keywords

aluminium compounds
conduction bands
gallium compounds
III-V semiconductors
indium compounds
infrared detectors
k.p calculations
MOCVD
photoconductivity
photodetectors
Poisson equation
Schrodinger equation
semiconductor growth
semiconductor quantum wells
valence bands
wide band gap semiconductors
Photodetectors

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10.1063/1.4813395

http://adsabs.harvard.edu/abs/2013ApPhL.103b2110P

Cite this

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title = "Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors",

abstract = "We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown by metal organic chemical vapor deposition and exhibit TM-polarized photocurrent at peak wavelengths of 7.5 and 9.3 μm at temperature of 14 K. Based on the experimental data of intersubband and interband transition energies and 8-band k . p Schr{\"o}dinger-Poisson solver calculations, we were able to estimate the conduction band offset to valence band offset discontinuity ratio (ΔEc:ΔEv) of 57:43 for In0.1Ga0.9N/GaN and 55:45, for In0.095GA0.905N/Al0.07Ga0.93N non-polar m-plane multi-quantum well structures.",

keywords = "aluminium compounds, conduction bands, gallium compounds, III-V semiconductors, indium compounds, infrared detectors, k.p calculations, MOCVD, photoconductivity, photodetectors, Poisson equation, Schrodinger equation, semiconductor growth, semiconductor quantum wells, valence bands, wide band gap semiconductors, Photodetectors",

author = "A. Pesach and E. Gross and C.-Y. Huang and Y.-D. Lin and A. Vardi and Schacham, {S. E.} and S. Nakamura and G. Bahir",

note = "Funding Information: The authors acknowledge partial financial support by the EC FET OPEN “Unitride” Grant No. 233950. The authors would like to thank Dr. S. Sakr, Dr. F. J. Julien, and Dr. E. Monroy for their help throughout this work. The MQW structures were grown at “University of California, Santa Barbara.” ",

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doi = "10.1063/1.4813395",

language = "אנגלית",

volume = "103",

pages = "22110",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

number = "2",

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TY - JOUR

T1 - Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

AU - Pesach, A.

AU - Gross, E.

AU - Huang, C.-Y.

AU - Lin, Y.-D.

AU - Vardi, A.

AU - Schacham, S. E.

AU - Nakamura, S.

AU - Bahir, G.

N1 - Funding Information: The authors acknowledge partial financial support by the EC FET OPEN “Unitride” Grant No. 233950. The authors would like to thank Dr. S. Sakr, Dr. F. J. Julien, and Dr. E. Monroy for their help throughout this work. The MQW structures were grown at “University of California, Santa Barbara.”

PY - 2013/7/1

Y1 - 2013/7/1

N2 - We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown by metal organic chemical vapor deposition and exhibit TM-polarized photocurrent at peak wavelengths of 7.5 and 9.3 μm at temperature of 14 K. Based on the experimental data of intersubband and interband transition energies and 8-band k . p Schrödinger-Poisson solver calculations, we were able to estimate the conduction band offset to valence band offset discontinuity ratio (ΔEc:ΔEv) of 57:43 for In0.1Ga0.9N/GaN and 55:45, for In0.095GA0.905N/Al0.07Ga0.93N non-polar m-plane multi-quantum well structures.

AB - We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown by metal organic chemical vapor deposition and exhibit TM-polarized photocurrent at peak wavelengths of 7.5 and 9.3 μm at temperature of 14 K. Based on the experimental data of intersubband and interband transition energies and 8-band k . p Schrödinger-Poisson solver calculations, we were able to estimate the conduction band offset to valence band offset discontinuity ratio (ΔEc:ΔEv) of 57:43 for In0.1Ga0.9N/GaN and 55:45, for In0.095GA0.905N/Al0.07Ga0.93N non-polar m-plane multi-quantum well structures.

KW - aluminium compounds

KW - conduction bands

KW - gallium compounds

KW - III-V semiconductors

KW - indium compounds

KW - infrared detectors

KW - k.p calculations

KW - MOCVD

KW - photoconductivity

KW - photodetectors

KW - Poisson equation

KW - Schrodinger equation

KW - semiconductor growth

KW - semiconductor quantum wells

KW - valence bands

KW - wide band gap semiconductors

KW - Photodetectors

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U2 - 10.1063/1.4813395

DO - 10.1063/1.4813395

M3 - מאמר

SN - 0003-6951

VL - 103

SP - 22110

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022110

ER -

Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

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