Nonlinear photoresists for maskless photolithography on the basis of Ag-doped As2 S3 glassy films

V. Lyubin; A. Arsh; M. Klebanov; R. Dror; B. Sfez

doi:10.1063/1.2831006

Nonlinear photoresists for maskless photolithography on the basis of Ag-doped As2 S3 glassy films

V. Lyubin, A. Arsh, M. Klebanov, R. Dror, B. Sfez

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Inorganic chalcogenide photoresists are widely used in microelectronics and optoelectronics. Here, we describe strongly nonlinear chalcogenide photoresists fabricated on the basis of Ag-doped As2 S3 glassy films. Photoresists are prepared by vacuum coevaporation of As2 S3 bulk glass and Ag. Superlinear dissolution characteristics of Ag-doped photoresists are explained in the framework of the so-called "percolation approach." The advantages of superlinear photoresists for maskless photolithography are briefly discussed.

Original language	English
Article number	011118
Journal	Applied Physics Letters
Volume	92
Issue number	1
DOIs	https://doi.org/10.1063/1.2831006
State	Published - 16 Jan 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2831006

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@article{dd61639bc62244fc9bcf266bf8f59255,

title = "Nonlinear photoresists for maskless photolithography on the basis of Ag-doped As2 S3 glassy films",

abstract = "Inorganic chalcogenide photoresists are widely used in microelectronics and optoelectronics. Here, we describe strongly nonlinear chalcogenide photoresists fabricated on the basis of Ag-doped As2 S3 glassy films. Photoresists are prepared by vacuum coevaporation of As2 S3 bulk glass and Ag. Superlinear dissolution characteristics of Ag-doped photoresists are explained in the framework of the so-called {"}percolation approach.{"} The advantages of superlinear photoresists for maskless photolithography are briefly discussed.",

author = "V. Lyubin and A. Arsh and M. Klebanov and R. Dror and B. Sfez",

year = "2008",

month = jan,

day = "16",

doi = "10.1063/1.2831006",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Nonlinear photoresists for maskless photolithography on the basis of Ag-doped As2 S3 glassy films

AU - Lyubin, V.

AU - Arsh, A.

AU - Klebanov, M.

AU - Dror, R.

AU - Sfez, B.

PY - 2008/1/16

Y1 - 2008/1/16

N2 - Inorganic chalcogenide photoresists are widely used in microelectronics and optoelectronics. Here, we describe strongly nonlinear chalcogenide photoresists fabricated on the basis of Ag-doped As2 S3 glassy films. Photoresists are prepared by vacuum coevaporation of As2 S3 bulk glass and Ag. Superlinear dissolution characteristics of Ag-doped photoresists are explained in the framework of the so-called "percolation approach." The advantages of superlinear photoresists for maskless photolithography are briefly discussed.

AB - Inorganic chalcogenide photoresists are widely used in microelectronics and optoelectronics. Here, we describe strongly nonlinear chalcogenide photoresists fabricated on the basis of Ag-doped As2 S3 glassy films. Photoresists are prepared by vacuum coevaporation of As2 S3 bulk glass and Ag. Superlinear dissolution characteristics of Ag-doped photoresists are explained in the framework of the so-called "percolation approach." The advantages of superlinear photoresists for maskless photolithography are briefly discussed.

UR - http://www.scopus.com/inward/record.url?scp=38049050647&partnerID=8YFLogxK

U2 - 10.1063/1.2831006

DO - 10.1063/1.2831006

M3 - Article

AN - SCOPUS:38049050647

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 011118

ER -

Nonlinear photoresists for maskless photolithography on the basis of Ag-doped As2 S3 glassy films

Abstract

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