Nonlinear pulse response of P-I-N photodiode caused by the change of the bias voltage

P. S. Matavulj, D. M. Gvozdić, J. B. Radunović, J. M. Elazar

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

An analytical expression is derived for nonlinear response of a p-i-n photodiode, commonly used in optical communications. Nonlinearity is caused only by the change of bias voltage, in case of pulse light excitation. The response time increases slowly with increasing the incident pulse power as a result of this nonlinearity. It is assumed in calculations that the optical excitation is not so strong to cause space charge redistribution.

Original languageEnglish
Pages (from-to)1519-1528
Number of pages10
JournalInternational Journal of Infrared and Millimeter Waves
Volume17
Issue number9
DOIs
StatePublished - 1 Jan 1996
Externally publishedYes

Keywords

  • Bias voltage
  • Nonlinear response
  • Photodiode
  • Response time

ASJC Scopus subject areas

  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)
  • Electrical and Electronic Engineering

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