Nonlinear pulse response of P-I-N photodiode caused by the change of the bias voltage

P. S. Matavulj; D. M. Gvozdić; J. B. Radunović; J. M. Elazar

doi:10.1007/BF02088505

Nonlinear pulse response of P-I-N photodiode caused by the change of the bias voltage

P. S. Matavulj, D. M. Gvozdić, J. B. Radunović, J. M. Elazar

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

An analytical expression is derived for nonlinear response of a p-i-n photodiode, commonly used in optical communications. Nonlinearity is caused only by the change of bias voltage, in case of pulse light excitation. The response time increases slowly with increasing the incident pulse power as a result of this nonlinearity. It is assumed in calculations that the optical excitation is not so strong to cause space charge redistribution.

Original language	English
Pages (from-to)	1519-1528
Number of pages	10
Journal	International Journal of Infrared and Millimeter Waves
Volume	17
Issue number	9
DOIs	https://doi.org/10.1007/BF02088505
State	Published - 1 Jan 1996
Externally published	Yes

Keywords

Bias voltage
Nonlinear response
Photodiode
Response time

ASJC Scopus subject areas

Radiation
Atomic and Molecular Physics, and Optics
Instrumentation
Condensed Matter Physics
Physics and Astronomy (miscellaneous)
Electrical and Electronic Engineering

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10.1007/BF02088505

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title = "Nonlinear pulse response of P-I-N photodiode caused by the change of the bias voltage",

abstract = "An analytical expression is derived for nonlinear response of a p-i-n photodiode, commonly used in optical communications. Nonlinearity is caused only by the change of bias voltage, in case of pulse light excitation. The response time increases slowly with increasing the incident pulse power as a result of this nonlinearity. It is assumed in calculations that the optical excitation is not so strong to cause space charge redistribution.",

keywords = "Bias voltage, Nonlinear response, Photodiode, Response time",

author = "Matavulj, {P. S.} and Gvozdi{\'c}, {D. M.} and Radunovi{\'c}, {J. B.} and Elazar, {J. M.}",

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language = "English",

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T1 - Nonlinear pulse response of P-I-N photodiode caused by the change of the bias voltage

AU - Matavulj, P. S.

AU - Gvozdić, D. M.

AU - Radunović, J. B.

AU - Elazar, J. M.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - An analytical expression is derived for nonlinear response of a p-i-n photodiode, commonly used in optical communications. Nonlinearity is caused only by the change of bias voltage, in case of pulse light excitation. The response time increases slowly with increasing the incident pulse power as a result of this nonlinearity. It is assumed in calculations that the optical excitation is not so strong to cause space charge redistribution.

AB - An analytical expression is derived for nonlinear response of a p-i-n photodiode, commonly used in optical communications. Nonlinearity is caused only by the change of bias voltage, in case of pulse light excitation. The response time increases slowly with increasing the incident pulse power as a result of this nonlinearity. It is assumed in calculations that the optical excitation is not so strong to cause space charge redistribution.

KW - Bias voltage

KW - Nonlinear response

KW - Photodiode

KW - Response time

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U2 - 10.1007/BF02088505

DO - 10.1007/BF02088505

M3 - Article

AN - SCOPUS:0030247378

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VL - 17

SP - 1519

EP - 1528

JO - International Journal of Infrared and Millimeter Waves

JF - International Journal of Infrared and Millimeter Waves

IS - 9

ER -

Nonlinear pulse response of P-I-N photodiode caused by the change of the bias voltage

Abstract

Keywords

ASJC Scopus subject areas

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