Nuclear spin diffusion in the semiconductor TlTaS3

A. M. Panich; C. L. Teske; W. Bensch

doi:10.1103/PhysRevB.73.115209

Nuclear spin diffusion in the semiconductor TlTaS3

A. M. Panich, C. L. Teske, W. Bensch

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We report on a Tl203 and Tl205 nuclear magnetic resonance study of the chain ternary semiconductor TlTaS3. We show that spin-lattice relaxation in this compound is driven by two contributions, namely, by interactions of nuclear spins with thermally activated carriers and with localized electron spins. The latter mechanism dominates at lower temperature; at that, our measurements provide striking manifestation of the spin-diffusion-limited relaxation regime. The experimental data obtained allow us to estimate the spin diffusion coefficient.

Original language	English
Article number	115209
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	73
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.73.115209
State	Published - 3 Apr 2006

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.73.115209

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abstract = "We report on a Tl203 and Tl205 nuclear magnetic resonance study of the chain ternary semiconductor TlTaS3. We show that spin-lattice relaxation in this compound is driven by two contributions, namely, by interactions of nuclear spins with thermally activated carriers and with localized electron spins. The latter mechanism dominates at lower temperature; at that, our measurements provide striking manifestation of the spin-diffusion-limited relaxation regime. The experimental data obtained allow us to estimate the spin diffusion coefficient.",

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N2 - We report on a Tl203 and Tl205 nuclear magnetic resonance study of the chain ternary semiconductor TlTaS3. We show that spin-lattice relaxation in this compound is driven by two contributions, namely, by interactions of nuclear spins with thermally activated carriers and with localized electron spins. The latter mechanism dominates at lower temperature; at that, our measurements provide striking manifestation of the spin-diffusion-limited relaxation regime. The experimental data obtained allow us to estimate the spin diffusion coefficient.

AB - We report on a Tl203 and Tl205 nuclear magnetic resonance study of the chain ternary semiconductor TlTaS3. We show that spin-lattice relaxation in this compound is driven by two contributions, namely, by interactions of nuclear spins with thermally activated carriers and with localized electron spins. The latter mechanism dominates at lower temperature; at that, our measurements provide striking manifestation of the spin-diffusion-limited relaxation regime. The experimental data obtained allow us to estimate the spin diffusion coefficient.

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Nuclear spin diffusion in the semiconductor TlTaS3

Abstract

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