Nuclear spin diffusion in the semiconductor TlTaS3

A. M. Panich, C. L. Teske, W. Bensch

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8 Scopus citations

Abstract

We report on a Tl203 and Tl205 nuclear magnetic resonance study of the chain ternary semiconductor TlTaS3. We show that spin-lattice relaxation in this compound is driven by two contributions, namely, by interactions of nuclear spins with thermally activated carriers and with localized electron spins. The latter mechanism dominates at lower temperature; at that, our measurements provide striking manifestation of the spin-diffusion-limited relaxation regime. The experimental data obtained allow us to estimate the spin diffusion coefficient.

Original languageEnglish
Article number115209
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume73
Issue number11
DOIs
StatePublished - 3 Apr 2006

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