Numerical investigation of influence of ionic space charge and flexoelectric polarization on measurements of elastic constants in nematic liquid crystals

M. Buczkowska, G. Derfel, M. Konowalski

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Deformations of nematic layers caused by magnetic field allow determination of the elastic constants of liquid crystal. In this paper, we simulated numerically the deformations of planar and homeotropic nematic layers. The flexoelectric properties of the nematic and presence of ions were taken into account. Our aim was to show the influence of flexoelectricity on the results of the real measurement of the elastic constants k33 and k 11. In these simulations, we calculated the optical phase difference ΔΦ between the ordinary and extraordinary rays of light passing through the layer placed between crossed polarizers as a function of the magnetic field induction B. One of the elastic constants can be calculated from the magnetic field threshold for deformation. The ratio k33/k 11 can be found by means of fitting theoretical ΔΦ(B) dependence to the experimental results. The calculations reveal that the flexoelectric properties influence the deformations induced by the external magnetic field. In the case of highly pure samples, this may lead to false results of measurement of the elastic constants ratio k33/k 11. This influence can be reduced if the nematic material contains ions of sufficiently high concentration. These results show that the flexoelectric properties may play an important role, especially in well purified samples.

Original languageEnglish
Pages (from-to)95-98
Number of pages4
JournalOpto-Electronics Review
Volume17
Issue number2
DOIs
StatePublished - 1 Jan 2009
Externally publishedYes

Keywords

  • Elastic constants
  • Flexoelectric polarization
  • Ionic space charge
  • Magnetic field induced deformations
  • Nematic liquid crystal

ASJC Scopus subject areas

  • Radiation
  • General Materials Science
  • Electrical and Electronic Engineering

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