Observation of local electron states linked to the quasi-Fermi level

V. Chernichkin; A. Dobrovolsky; V. Kasiyan; A. Nicorici; S. Danilov; L. Ryabova; Z. Dashevsky; D. Khokhlov

doi:10.1209/0295-5075/100/17008

Observation of local electron states linked to the quasi-Fermi level

V. Chernichkin, A. Dobrovolsky, V. Kasiyan, A. Nicorici, S. Danilov, L. Ryabova, Z. Dashevsky, D. Khokhlov

Department of Materials Engineering

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Abstract

We report on the observation of semiconductor local electron states linked to the quasi-Fermi level and, consequently, not characterized by the defined position in the energy spectrum which is familiar for shallow and deep impurities. This type of local electron states have been found in the doped narrow-gap semiconductor Pb _1xSn _xTe(In). The binding energy of these states is less than 10meV providing photoresponse at the wavelengths exceeding 100μm.

Original language	English
Article number	17008
Journal	EPL
Volume	100
Issue number	1
DOIs	https://doi.org/10.1209/0295-5075/100/17008
State	Published - 1 Oct 2012

ASJC Scopus subject areas

General Physics and Astronomy

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abstract = "We report on the observation of semiconductor local electron states linked to the quasi-Fermi level and, consequently, not characterized by the defined position in the energy spectrum which is familiar for shallow and deep impurities. This type of local electron states have been found in the doped narrow-gap semiconductor Pb 1xSn xTe(In). The binding energy of these states is less than 10meV providing photoresponse at the wavelengths exceeding 100μm.",

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AU - Chernichkin, V.

AU - Dobrovolsky, A.

AU - Kasiyan, V.

AU - Nicorici, A.

AU - Danilov, S.

AU - Ryabova, L.

AU - Dashevsky, Z.

AU - Khokhlov, D.

PY - 2012/10/1

Y1 - 2012/10/1

N2 - We report on the observation of semiconductor local electron states linked to the quasi-Fermi level and, consequently, not characterized by the defined position in the energy spectrum which is familiar for shallow and deep impurities. This type of local electron states have been found in the doped narrow-gap semiconductor Pb 1xSn xTe(In). The binding energy of these states is less than 10meV providing photoresponse at the wavelengths exceeding 100μm.

AB - We report on the observation of semiconductor local electron states linked to the quasi-Fermi level and, consequently, not characterized by the defined position in the energy spectrum which is familiar for shallow and deep impurities. This type of local electron states have been found in the doped narrow-gap semiconductor Pb 1xSn xTe(In). The binding energy of these states is less than 10meV providing photoresponse at the wavelengths exceeding 100μm.

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Observation of local electron states linked to the quasi-Fermi level

Abstract

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