Observations of conduction-band structure of 4H- and 6H-SiC

I. Shalish; I. B. Altfeder; V. Narayanamurti

Observations of conduction-band structure of 4H- and 6H-SiC

I. Shalish, I. B. Altfeder, V. Narayanamurti

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Ballistic electron-emission spectroscopy (BEES) and photoluminescence are used to study conduction-band structure related transport properties of the 4H and 6H polytypes of SiC. A secondary energy threshold at 2.7 eV is observed in the BEES spectrum of 4H-SiC, in good agreement with a value of 2.8 eV deduced from reported ab initio calculations. The results from 6H-SiC, are suggested to be influenced by transport properties of other polytype inclusions, also supported by band-edge transitions evident in 6H-SiC photoluminescence spectra.

Original language	English
Article number	073104
Pages (from-to)	731041-731044
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	65
Issue number	7
State	Published - 15 Feb 2002
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

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title = "Observations of conduction-band structure of 4H- and 6H-SiC",

abstract = "Ballistic electron-emission spectroscopy (BEES) and photoluminescence are used to study conduction-band structure related transport properties of the 4H and 6H polytypes of SiC. A secondary energy threshold at 2.7 eV is observed in the BEES spectrum of 4H-SiC, in good agreement with a value of 2.8 eV deduced from reported ab initio calculations. The results from 6H-SiC, are suggested to be influenced by transport properties of other polytype inclusions, also supported by band-edge transitions evident in 6H-SiC photoluminescence spectra.",

author = "I. Shalish and Altfeder, {I. B.} and V. Narayanamurti",

year = "2002",

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volume = "65",

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journal = "Physical Review B - Condensed Matter and Materials Physics",

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T1 - Observations of conduction-band structure of 4H- and 6H-SiC

AU - Shalish, I.

AU - Altfeder, I. B.

AU - Narayanamurti, V.

PY - 2002/2/15

Y1 - 2002/2/15

N2 - Ballistic electron-emission spectroscopy (BEES) and photoluminescence are used to study conduction-band structure related transport properties of the 4H and 6H polytypes of SiC. A secondary energy threshold at 2.7 eV is observed in the BEES spectrum of 4H-SiC, in good agreement with a value of 2.8 eV deduced from reported ab initio calculations. The results from 6H-SiC, are suggested to be influenced by transport properties of other polytype inclusions, also supported by band-edge transitions evident in 6H-SiC photoluminescence spectra.

AB - Ballistic electron-emission spectroscopy (BEES) and photoluminescence are used to study conduction-band structure related transport properties of the 4H and 6H polytypes of SiC. A secondary energy threshold at 2.7 eV is observed in the BEES spectrum of 4H-SiC, in good agreement with a value of 2.8 eV deduced from reported ab initio calculations. The results from 6H-SiC, are suggested to be influenced by transport properties of other polytype inclusions, also supported by band-edge transitions evident in 6H-SiC photoluminescence spectra.

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M3 - Article

AN - SCOPUS:12544254708

SN - 0163-1829

VL - 65

SP - 731041

EP - 731044

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 7

M1 - 073104

ER -

Observations of conduction-band structure of 4H- and 6H-SiC

Abstract

ASJC Scopus subject areas

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