Observations of conduction-band structure of 4H- and 6H-SiC

I. Shalish, I. B. Altfeder, V. Narayanamurti

Research output: Contribution to journalArticlepeer-review

25 Scopus citations


Ballistic electron-emission spectroscopy (BEES) and photoluminescence are used to study conduction-band structure related transport properties of the 4H and 6H polytypes of SiC. A secondary energy threshold at 2.7 eV is observed in the BEES spectrum of 4H-SiC, in good agreement with a value of 2.8 eV deduced from reported ab initio calculations. The results from 6H-SiC, are suggested to be influenced by transport properties of other polytype inclusions, also supported by band-edge transitions evident in 6H-SiC photoluminescence spectra.

Original languageEnglish
Article number073104
Pages (from-to)731041-731044
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number7
StatePublished - 15 Feb 2002
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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