Ballistic electron-emission spectroscopy (BEES) and photoluminescence are used to study conduction-band structure related transport properties of the (formula presented) and (formula presented) polytypes of SiC. A secondary energy threshold at 2.7 eV is observed in the BEES spectrum of (formula presented) in good agreement with a value of 2.8 eV deduced from reported ab initio calculations. The results from (formula presented) are suggested to be influenced by transport properties of other polytype inclusions, also supported by band-edge transitions evident in (formula presented) photoluminescence spectra.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 1 Jan 2002|