On the determination of phosphorus depth profile in phosphorus-doped silicon

Z. B. Alfassi, M. H. Yang

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


The depth profile of phosphorus concentration in phosphorus-doped silicon was shown to be measureable with an accuracy of 1-3% by the use of liquid scintillation counting after neutron irradiation. Both the amount of Si and P are determined by neutron activation analysis followed by liquid scintillation counting for 1-5 hours after the end of irradiation and 5-10 days after irradiation, respectively. Concentrations as low as 10 ppm and thicknesses of 20 nm can be determined.

Original languageEnglish
Pages (from-to)99-104
Number of pages6
JournalJournal of Radioanalytical and Nuclear Chemistry
Issue number1
StatePublished - 1 Jul 1989
Externally publishedYes

ASJC Scopus subject areas

  • Analytical Chemistry
  • Nuclear Energy and Engineering
  • Radiology Nuclear Medicine and imaging
  • Pollution
  • Spectroscopy
  • Public Health, Environmental and Occupational Health
  • Health, Toxicology and Mutagenesis


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