Abstract
The depth profile of phosphorus concentration in phosphorus-doped silicon was shown to be measureable with an accuracy of 1-3% by the use of liquid scintillation counting after neutron irradiation. Both the amount of Si and P are determined by neutron activation analysis followed by liquid scintillation counting for 1-5 hours after the end of irradiation and 5-10 days after irradiation, respectively. Concentrations as low as 10 ppm and thicknesses of 20 nm can be determined.
| Original language | English |
|---|---|
| Pages (from-to) | 99-104 |
| Number of pages | 6 |
| Journal | Journal of Radioanalytical and Nuclear Chemistry |
| Volume | 132 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1 Jul 1989 |
| Externally published | Yes |
ASJC Scopus subject areas
- Analytical Chemistry
- Nuclear Energy and Engineering
- Radiology Nuclear Medicine and imaging
- Pollution
- Spectroscopy
- Public Health, Environmental and Occupational Health
- Health, Toxicology and Mutagenesis
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