TY - GEN
T1 - On the ESD behavior of AlGaN/GaN schottky diodes and trap assisted failure mechanism
AU - Shankar, Bhawani
AU - Sengupta, Rudrarup
AU - Gupta, Sayak Dutta
AU - Soni, Ankit
AU - Mohan, Nagaboopathy
AU - Bhat, Navakanta
AU - Shrivastava, Mayank
AU - Raghavan, Srinivasan
N1 - Funding Information:
Authors would like to acknowledge Department of Science and Technology (DST), Govt. of India, for the financial support under project no. DST/TSG/AMT/2015/294.
PY - 2017/10/18
Y1 - 2017/10/18
N2 - This experimental study reports ESD behavior of novel designs of GaN Schottky diodes. Impact of electro-thermal transport, device degradation and trap generation on its ESD robustness is analyzed. Role of interface traps in ESD failure of GaN Schottky diode is investigated. Transition from soft-to-hard failure, which is found to depend on diode area, presence of traps and diode design is discussed. Unique degradation trends, cumulative nature of degradation and trap assisted failure modes are discovered.
AB - This experimental study reports ESD behavior of novel designs of GaN Schottky diodes. Impact of electro-thermal transport, device degradation and trap generation on its ESD robustness is analyzed. Role of interface traps in ESD failure of GaN Schottky diode is investigated. Transition from soft-to-hard failure, which is found to depend on diode area, presence of traps and diode design is discussed. Unique degradation trends, cumulative nature of degradation and trap assisted failure modes are discovered.
UR - http://www.scopus.com/inward/record.url?scp=85037812186&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85037812186
T3 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
BT - Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2017, EOS/ESD 2017
PB - ESD Association
T2 - 39th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2017
Y2 - 10 September 2017 through 14 September 2017
ER -