Abstract
The energy levels of a Cr-related trigonal centre in GaAs are studied both experimentally and theoretically. New lines and absorption bands in the energy interval of 0.9 < hv < 1.4 eV are discovered in the p-type GaAs:Cr by the method of light-induced modulation of absorption. These lines are ascribed to the intra-centre transitions with charge transfer at a [Cr-X] trigonal defect, [Cr-X-] —->[Cr°X°], where [Cr°X0) are metastable vibronic states with a large relaxation time which is found to be 10-1 s at room temperature. The microscopic theory of such a double defect is developed with the assumption that X is the arsenic vacancy and the strong lattice relaxation is originated from the pseudo-JahnTeller effect due to the tunnelling of an electron between CrGa- and VAs-related deep levels of the double-well effective potential.
Original language | English |
---|---|
Pages (from-to) | 4561-4578 |
Number of pages | 18 |
Journal | Journal of Physics C: Solid State Physics |
Volume | 19 |
Issue number | 23 |
DOIs | |
State | Published - 20 Aug 1986 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- General Engineering
- General Physics and Astronomy