On the interface strain distribution in Si-on-sapphire system

E. Gartstein; S. Lach; D. Mogilyanski; H. Metzger; J. Peisl

doi:10.1016/S0921-4526(98)00207-5

On the interface strain distribution in Si-on-sapphire system

E. Gartstein, S. Lach, D. Mogilyanski, H. Metzger, J. Peisl

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Strain distribution in Si-on-sapphire (SOS) heterostructure was assessed using the experimentally determined in-plane and out-of-plane strain values. The calculation is performed in the frame of the biaxial strain model. Similar strain distributions were observed for the SOS samples obtained from different sources.

Original language	English
Pages (from-to)	79-82
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	248
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(98)00207-5
State	Published - 15 Jun 1998

Keywords

Sapphire
Silicon
X-ray strain determination

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(98)00207-5

Cite this

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title = "On the interface strain distribution in Si-on-sapphire system",

abstract = "Strain distribution in Si-on-sapphire (SOS) heterostructure was assessed using the experimentally determined in-plane and out-of-plane strain values. The calculation is performed in the frame of the biaxial strain model. Similar strain distributions were observed for the SOS samples obtained from different sources.",

keywords = "Sapphire, Silicon, X-ray strain determination",

author = "E. Gartstein and S. Lach and D. Mogilyanski and H. Metzger and J. Peisl",

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T1 - On the interface strain distribution in Si-on-sapphire system

AU - Gartstein, E.

AU - Lach, S.

AU - Mogilyanski, D.

AU - Metzger, H.

AU - Peisl, J.

PY - 1998/6/15

Y1 - 1998/6/15

N2 - Strain distribution in Si-on-sapphire (SOS) heterostructure was assessed using the experimentally determined in-plane and out-of-plane strain values. The calculation is performed in the frame of the biaxial strain model. Similar strain distributions were observed for the SOS samples obtained from different sources.

AB - Strain distribution in Si-on-sapphire (SOS) heterostructure was assessed using the experimentally determined in-plane and out-of-plane strain values. The calculation is performed in the frame of the biaxial strain model. Similar strain distributions were observed for the SOS samples obtained from different sources.

KW - Sapphire

KW - Silicon

KW - X-ray strain determination

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U2 - 10.1016/S0921-4526(98)00207-5

DO - 10.1016/S0921-4526(98)00207-5

M3 - Article

AN - SCOPUS:0032093944

SN - 0921-4526

VL - 248

SP - 79

EP - 82

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

On the interface strain distribution in Si-on-sapphire system

Abstract

Keywords

ASJC Scopus subject areas

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