On the island nucleation process in LPOMVPE In0.2Ga0.8As/GaAs multilayers grown on GaAs and AlAs buffers

E. Gartstein; D. Mogilyanski; R. Golan; D. Fekete

doi:10.1016/S0040-6090(02)00898-2

On the island nucleation process in LPOMVPE In_0.2Ga_0.8As/GaAs multilayers grown on GaAs and AlAs buffers

E. Gartstein
, D. Mogilyanski
, R. Golan
, D. Fekete

Research output: Contribution to journal › Conference article › peer-review

Abstract

A comparative study of the nucleation of In enriched islands in In_0.2Ga_0.8As/GaAs multilayers grown on top of GaAs or AlAs buffers deposited on GaAs substrates with various miscut parameters was performed by using X-ray diffraction, transmission electron microscopy (TEM) and atomic force microscopy (AFM) techniques. Experimental results showed that the evolution of the self-assembly strongly depends on the miscut parameters and the morphology of the buffer/multilayer interface. For the samples with the same nominal strain misfit between the bilayers the nucleation is enhanced for the larger initial miscut on the substrate and the degree of the lateral ordering across the interface is promoted by the morphology of the underlying AlAs buffer layer.

Original language	English
Pages (from-to)	15-22
Number of pages	8
Journal	Thin Solid Films
Volume	424
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(02)00898-2
State	Published - 22 Jan 2003
Event	proceedings of the 1st Ineternational Conference on Materials - Singapore, Singapore Duration: 1 Jul 2001 → 6 Jul 2001

Keywords

Interfacial strains
Nanostructured strained multilayers
X-Ray diffraction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(02)00898-2

Cite this

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title = "On the island nucleation process in LPOMVPE In0.2Ga0.8As/GaAs multilayers grown on GaAs and AlAs buffers",

abstract = "A comparative study of the nucleation of In enriched islands in In0.2Ga0.8As/GaAs multilayers grown on top of GaAs or AlAs buffers deposited on GaAs substrates with various miscut parameters was performed by using X-ray diffraction, transmission electron microscopy (TEM) and atomic force microscopy (AFM) techniques. Experimental results showed that the evolution of the self-assembly strongly depends on the miscut parameters and the morphology of the buffer/multilayer interface. For the samples with the same nominal strain misfit between the bilayers the nucleation is enhanced for the larger initial miscut on the substrate and the degree of the lateral ordering across the interface is promoted by the morphology of the underlying AlAs buffer layer.",

keywords = "Interfacial strains, Nanostructured strained multilayers, X-Ray diffraction",

author = "E. Gartstein and D. Mogilyanski and R. Golan and D. Fekete",

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TY - JOUR

T1 - On the island nucleation process in LPOMVPE In0.2Ga0.8As/GaAs multilayers grown on GaAs and AlAs buffers

AU - Gartstein, E.

AU - Mogilyanski, D.

AU - Golan, R.

AU - Fekete, D.

PY - 2003/1/22

Y1 - 2003/1/22

N2 - A comparative study of the nucleation of In enriched islands in In0.2Ga0.8As/GaAs multilayers grown on top of GaAs or AlAs buffers deposited on GaAs substrates with various miscut parameters was performed by using X-ray diffraction, transmission electron microscopy (TEM) and atomic force microscopy (AFM) techniques. Experimental results showed that the evolution of the self-assembly strongly depends on the miscut parameters and the morphology of the buffer/multilayer interface. For the samples with the same nominal strain misfit between the bilayers the nucleation is enhanced for the larger initial miscut on the substrate and the degree of the lateral ordering across the interface is promoted by the morphology of the underlying AlAs buffer layer.

AB - A comparative study of the nucleation of In enriched islands in In0.2Ga0.8As/GaAs multilayers grown on top of GaAs or AlAs buffers deposited on GaAs substrates with various miscut parameters was performed by using X-ray diffraction, transmission electron microscopy (TEM) and atomic force microscopy (AFM) techniques. Experimental results showed that the evolution of the self-assembly strongly depends on the miscut parameters and the morphology of the buffer/multilayer interface. For the samples with the same nominal strain misfit between the bilayers the nucleation is enhanced for the larger initial miscut on the substrate and the degree of the lateral ordering across the interface is promoted by the morphology of the underlying AlAs buffer layer.

KW - Interfacial strains

KW - Nanostructured strained multilayers

KW - X-Ray diffraction

UR - https://www.scopus.com/pages/publications/0037460351

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DO - 10.1016/S0040-6090(02)00898-2

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