On the nature of ferromagnetism in dilute magnetic semiconductors: GaAs:Mn and GaP:Mn

V. A. Ivanov; P. M. Krstajic; F. M. Peeters; V. Fleurov; K. Kikoin

doi:10.1016/S0304-8853(02)01023-5

On the nature of ferromagnetism in dilute magnetic semiconductors: GaAs:Mn and GaP:Mn

V. A. Ivanov, P. M. Krstajic, F. M. Peeters, V. Fleurov, K. Kikoin

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

On the basis of a simplified Hamiltonian for transition metal impurities in diluted magnetic semiconductors (DMS), the nature of ferromagnetism in p-type III-V DMS are investigated. Ferromagnetism is governed by the Anderson-Hubbard parameter for 3d electrons of Mn²⁺ and their strong hybridization with the hole carriers in the semiconducting medium. The origin of ferromagnetism in these materials has similarity with the Zener mechanism. From the energetically preferable parallel orientation of Mn spins the Curie temperature is calculated for GaAs:Mn.

Original language	English
Pages (from-to)	237-240
Number of pages	4
Journal	Journal of Magnetism and Magnetic Materials
Volume	258-259
DOIs	https://doi.org/10.1016/S0304-8853(02)01023-5
State	Published - 1 Mar 2003
Event	Second Moscow International Symposium on Magnetism (MISM) - Moscow, Russian Federation Duration: 20 Jun 2001 → 24 Jun 2001

Keywords

Diluted magnetic semiconductors
Ferromagnetism
Impurity levels
Zener-mechanism

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/S0304-8853(02)01023-5

Cite this

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title = "On the nature of ferromagnetism in dilute magnetic semiconductors: GaAs:Mn and GaP:Mn",

abstract = "On the basis of a simplified Hamiltonian for transition metal impurities in diluted magnetic semiconductors (DMS), the nature of ferromagnetism in p-type III-V DMS are investigated. Ferromagnetism is governed by the Anderson-Hubbard parameter for 3d electrons of Mn2+ and their strong hybridization with the hole carriers in the semiconducting medium. The origin of ferromagnetism in these materials has similarity with the Zener mechanism. From the energetically preferable parallel orientation of Mn spins the Curie temperature is calculated for GaAs:Mn.",

keywords = "Diluted magnetic semiconductors, Ferromagnetism, Impurity levels, Zener-mechanism",

author = "Ivanov, {V. A.} and Krstajic, {P. M.} and Peeters, {F. M.} and V. Fleurov and K. Kikoin",

note = "Funding Information: This work was supported by the Flemish Science Foundation (FWO-VI), the Belgian Inter-University Attraction Poles (IUAP), the “Onderzoeksraad van de Universiteit Antwerpen” (GOA) and the Israel Physical Society. ; Second Moscow International Symposium on Magnetism (MISM) ; Conference date: 20-06-2001 Through 24-06-2001",

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doi = "10.1016/S0304-8853(02)01023-5",

language = "English",

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T1 - On the nature of ferromagnetism in dilute magnetic semiconductors

T2 - Second Moscow International Symposium on Magnetism (MISM)

AU - Ivanov, V. A.

AU - Krstajic, P. M.

AU - Peeters, F. M.

AU - Fleurov, V.

AU - Kikoin, K.

N1 - Funding Information: This work was supported by the Flemish Science Foundation (FWO-VI), the Belgian Inter-University Attraction Poles (IUAP), the “Onderzoeksraad van de Universiteit Antwerpen” (GOA) and the Israel Physical Society.

PY - 2003/3/1

Y1 - 2003/3/1

N2 - On the basis of a simplified Hamiltonian for transition metal impurities in diluted magnetic semiconductors (DMS), the nature of ferromagnetism in p-type III-V DMS are investigated. Ferromagnetism is governed by the Anderson-Hubbard parameter for 3d electrons of Mn2+ and their strong hybridization with the hole carriers in the semiconducting medium. The origin of ferromagnetism in these materials has similarity with the Zener mechanism. From the energetically preferable parallel orientation of Mn spins the Curie temperature is calculated for GaAs:Mn.

AB - On the basis of a simplified Hamiltonian for transition metal impurities in diluted magnetic semiconductors (DMS), the nature of ferromagnetism in p-type III-V DMS are investigated. Ferromagnetism is governed by the Anderson-Hubbard parameter for 3d electrons of Mn2+ and their strong hybridization with the hole carriers in the semiconducting medium. The origin of ferromagnetism in these materials has similarity with the Zener mechanism. From the energetically preferable parallel orientation of Mn spins the Curie temperature is calculated for GaAs:Mn.

KW - Diluted magnetic semiconductors

KW - Ferromagnetism

KW - Impurity levels

KW - Zener-mechanism

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U2 - 10.1016/S0304-8853(02)01023-5

DO - 10.1016/S0304-8853(02)01023-5

M3 - Conference article

AN - SCOPUS:0037335798

SN - 0304-8853

VL - 258-259

SP - 237

EP - 240

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

Y2 - 20 June 2001 through 24 June 2001

ER -

On the nature of ferromagnetism in dilute magnetic semiconductors: GaAs:Mn and GaP:Mn

Abstract

Keywords

ASJC Scopus subject areas

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