On the pressure dependence and k-space localization of the deep level states in zinc blend semiconductors doped by the transition metals

K. A. Kikoin; V. N. Fleurov

doi:10.1016/0038-1098(81)90227-1

On the pressure dependence and k-space localization of the deep level states in zinc blend semiconductors doped by the transition metals

K. A. Kikoin, V. N. Fleurov

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

An explanation is proposed for the unusual behaviour of the pressure dependent deep level position in Cr-doped InP. It is shown that this level is attached to the subsidiary L-minimum of the conduction band due to the large contribution of the L_1c-point vicinity in the electron density of states, and the symmetry properties of d-impurity states suppressing the hybridization with the band states in the central {top right corner}_1c valley of the conduction band.

Original language	English
Pages (from-to)	1281-1284
Number of pages	4
Journal	Solid State Communications
Volume	39
Issue number	12
DOIs	https://doi.org/10.1016/0038-1098(81)90227-1
State	Published - 1 Jan 1981
Externally published	Yes

ASJC Scopus subject areas

Chemistry (all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/0038-1098(81)90227-1

Cite this

@article{e3d95ed302e94153af790475b234762d,

title = "On the pressure dependence and k-space localization of the deep level states in zinc blend semiconductors doped by the transition metals",

abstract = "An explanation is proposed for the unusual behaviour of the pressure dependent deep level position in Cr-doped InP. It is shown that this level is attached to the subsidiary L-minimum of the conduction band due to the large contribution of the L1c-point vicinity in the electron density of states, and the symmetry properties of d-impurity states suppressing the hybridization with the band states in the central {top right corner}1c valley of the conduction band.",

author = "Kikoin, {K. A.} and Fleurov, {V. N.}",

year = "1981",

month = jan,

day = "1",

doi = "10.1016/0038-1098(81)90227-1",

language = "English",

volume = "39",

pages = "1281--1284",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "12",

}

TY - JOUR

T1 - On the pressure dependence and k-space localization of the deep level states in zinc blend semiconductors doped by the transition metals

AU - Kikoin, K. A.

AU - Fleurov, V. N.

PY - 1981/1/1

Y1 - 1981/1/1

N2 - An explanation is proposed for the unusual behaviour of the pressure dependent deep level position in Cr-doped InP. It is shown that this level is attached to the subsidiary L-minimum of the conduction band due to the large contribution of the L1c-point vicinity in the electron density of states, and the symmetry properties of d-impurity states suppressing the hybridization with the band states in the central {top right corner}1c valley of the conduction band.

AB - An explanation is proposed for the unusual behaviour of the pressure dependent deep level position in Cr-doped InP. It is shown that this level is attached to the subsidiary L-minimum of the conduction band due to the large contribution of the L1c-point vicinity in the electron density of states, and the symmetry properties of d-impurity states suppressing the hybridization with the band states in the central {top right corner}1c valley of the conduction band.

UR - http://www.scopus.com/inward/record.url?scp=0019610363&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(81)90227-1

DO - 10.1016/0038-1098(81)90227-1

M3 - Article

AN - SCOPUS:0019610363

SN - 0038-1098

VL - 39

SP - 1281

EP - 1284

JO - Solid State Communications

JF - Solid State Communications

IS - 12

ER -

On the pressure dependence and k-space localization of the deep level states in zinc blend semiconductors doped by the transition metals

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this