On the pressure dependence and k-space localization of the deep level states in zinc blend semiconductors doped by the transition metals

K. A. Kikoin; V. N. Fleurov

doi:10.1016/0038-1098(81)90227-1

On the pressure dependence and k-space localization of the deep level states in zinc blend semiconductors doped by the transition metals

K. A. Kikoin
, V. N. Fleurov

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

An explanation is proposed for the unusual behaviour of the pressure dependent deep level position in Cr-doped InP. It is shown that this level is attached to the subsidiary L-minimum of the conduction band due to the large contribution of the L_1c-point vicinity in the electron density of states, and the symmetry properties of d-impurity states suppressing the hybridization with the band states in the central {top right corner}_1c valley of the conduction band.

Original language	English
Pages (from-to)	1281-1284
Number of pages	4
Journal	Solid State Communications
Volume	39
Issue number	12
DOIs	https://doi.org/10.1016/0038-1098(81)90227-1
State	Published - 1 Jan 1981
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(81)90227-1

Cite this

@article{e3d95ed302e94153af790475b234762d,

title = "On the pressure dependence and k-space localization of the deep level states in zinc blend semiconductors doped by the transition metals",

abstract = "An explanation is proposed for the unusual behaviour of the pressure dependent deep level position in Cr-doped InP. It is shown that this level is attached to the subsidiary L-minimum of the conduction band due to the large contribution of the L1c-point vicinity in the electron density of states, and the symmetry properties of d-impurity states suppressing the hybridization with the band states in the central \{top right corner\}1c valley of the conduction band.",

author = "Kikoin, \{K. A.\} and Fleurov, \{V. N.\}",

year = "1981",

month = jan,

day = "1",

doi = "10.1016/0038-1098(81)90227-1",

language = "English",

volume = "39",

pages = "1281--1284",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "12",

}

TY - JOUR

T1 - On the pressure dependence and k-space localization of the deep level states in zinc blend semiconductors doped by the transition metals

AU - Kikoin, K. A.

AU - Fleurov, V. N.

PY - 1981/1/1

Y1 - 1981/1/1

N2 - An explanation is proposed for the unusual behaviour of the pressure dependent deep level position in Cr-doped InP. It is shown that this level is attached to the subsidiary L-minimum of the conduction band due to the large contribution of the L1c-point vicinity in the electron density of states, and the symmetry properties of d-impurity states suppressing the hybridization with the band states in the central {top right corner}1c valley of the conduction band.

AB - An explanation is proposed for the unusual behaviour of the pressure dependent deep level position in Cr-doped InP. It is shown that this level is attached to the subsidiary L-minimum of the conduction band due to the large contribution of the L1c-point vicinity in the electron density of states, and the symmetry properties of d-impurity states suppressing the hybridization with the band states in the central {top right corner}1c valley of the conduction band.

UR - https://www.scopus.com/pages/publications/0019610363

U2 - 10.1016/0038-1098(81)90227-1

DO - 10.1016/0038-1098(81)90227-1

M3 - Article

AN - SCOPUS:0019610363

SN - 0038-1098

VL - 39

SP - 1281

EP - 1284

JO - Solid State Communications

JF - Solid State Communications

IS - 12

ER -

On the pressure dependence and k-space localization of the deep level states in zinc blend semiconductors doped by the transition metals

Abstract

ASJC Scopus subject areas

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