On the trap assisted stress induced safe operating area limits of AlGaN/GaN HEMTs

Bhawani Shankar, Ankit Soni, Sayak Dutta Gupta, R. Sengupta, H. Khand, N. Mohan, Srinivasan Raghavan, Mayank Shrivastava

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

10 Scopus citations

Abstract

This experimental study reports a systematic investigation of Safe Operating Area limits in AlGaN/GaN HEMT using sub-μs pulse characterization with on the fly Raman and CV characterization to probe defect and stress evolution across the device. Influence of a recess depth on SOA boundary is analyzed. Post failure analysis corroborates well with the failure physics unveiled in this work.

Original languageEnglish
Title of host publication2018 IEEE International Reliability Physics Symposium, IRPS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages4E.41-4E.45
ISBN (Electronic)9781538654798
DOIs
StatePublished - 25 May 2018
Externally publishedYes
Event2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States
Duration: 11 Mar 201815 Mar 2018

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2018-March
ISSN (Print)1541-7026

Conference

Conference2018 IEEE International Reliability Physics Symposium, IRPS 2018
Country/TerritoryUnited States
CityBurlingame
Period11/03/1815/03/18

Keywords

  • GaN HEMT
  • Safe Operating Area
  • Stress
  • Trap

ASJC Scopus subject areas

  • Engineering (all)

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