@inproceedings{bb0dc4bcb39c4a28afcdd5061eadbed1,
title = "On the trap assisted stress induced safe operating area limits of AlGaN/GaN HEMTs",
abstract = "This experimental study reports a systematic investigation of Safe Operating Area limits in AlGaN/GaN HEMT using sub-μs pulse characterization with on the fly Raman and CV characterization to probe defect and stress evolution across the device. Influence of a recess depth on SOA boundary is analyzed. Post failure analysis corroborates well with the failure physics unveiled in this work.",
keywords = "GaN HEMT, Safe Operating Area, Stress, Trap",
author = "Bhawani Shankar and Ankit Soni and Gupta, {Sayak Dutta} and R. Sengupta and H. Khand and N. Mohan and Srinivasan Raghavan and Mayank Shrivastava",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE International Reliability Physics Symposium, IRPS 2018 ; Conference date: 11-03-2018 Through 15-03-2018",
year = "2018",
month = may,
day = "25",
doi = "10.1109/IRPS.2018.8353596",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers",
pages = "4E.41--4E.45",
booktitle = "2018 IEEE International Reliability Physics Symposium, IRPS 2018",
address = "United States",
}