One-dimensional antireflection gratings in (100) silicon: A numerical study

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Abstract

The antireflection properties of V-grooved gratings in (100) crystalline silicon are studied numerically by use of rigorous electromagnetic theory. This study shows that these gratings can exhibit antireflective behavior only for TM-polarized radiation. The V-grooved structures are analyzed as a function of grating period, duty cycle, and depth of a SiO2 mask layer that is added to the tops of the V-grooved mesas. Specific antireflection grating designs (the duty cycle and depth versus the period) are presented that illustrate TM-polarized reflectivity much less than 10−3 with periods as high as 80% the wavelength of incident radiation. These designs exhibit good tolerance to fabrication errors and grating’s plane deviations in a planar-diffraction mounting.

Original languageEnglish
Pages (from-to)369-373
Number of pages5
JournalApplied Optics
Volume37
Issue number2
DOIs
StatePublished - 10 Jan 1998

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