Optical and electronic properties of Ti1-xNbxN thin films

K. Vasu, G. M. Gopikrishnan, M. Ghanashyam Krishna, K. A. Padmanabhan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Ti1-xNbxN thin films with x=0, 0.26, 0.41, 0.58 and 1 were deposited on silicon (311) substrate by RF magnetron sputtering. The dielectric functions of these films were calculated by fitting measured reflectance spectra to the Drude-Lorentz model. The measured reflectance spectra exhibits a minimum in the visible region and this feature shifts to higher energy (shorter wavelength) with increase in x. The observed behavior can be modeled as the response of four Lorentz oscillators. The real part of the dielectric function is characterized by a screened plasma energy of 2.26 eV for x=0 which increased to 2.80 eV for x=0.58 in the Ti1-xNbxN film.

Original languageEnglish
Title of host publicationSolid State Physics - Proceedings of the 56th DAE Solid State Physics Symposium 2011
Number of pages2
StatePublished - 1 Dec 2012
Externally publishedYes
Event56th DAE Solid State Physics Symposium 2011 - Kattankulathur, Tamilnadu, India
Duration: 19 Dec 201123 Dec 2011

Publication series

NameAIP Conference Proceedings
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


Conference56th DAE Solid State Physics Symposium 2011
CityKattankulathur, Tamilnadu


  • Drude-Lorentz model
  • TiN thin films
  • dielectric function
  • reflectance

ASJC Scopus subject areas

  • General Physics and Astronomy


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