Optical and electronic properties of Ti1-xNbxN thin films

K. Vasu; G. M. Gopikrishnan; M. Ghanashyam Krishna; K. A. Padmanabhan

doi:10.1063/1.4710195

Optical and electronic properties of Ti_1-xNb_xN thin films

K. Vasu, G. M. Gopikrishnan, M. Ghanashyam Krishna, K. A. Padmanabhan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Ti_1-xNb_xN thin films with x=0, 0.26, 0.41, 0.58 and 1 were deposited on silicon (311) substrate by RF magnetron sputtering. The dielectric functions of these films were calculated by fitting measured reflectance spectra to the Drude-Lorentz model. The measured reflectance spectra exhibits a minimum in the visible region and this feature shifts to higher energy (shorter wavelength) with increase in x. The observed behavior can be modeled as the response of four Lorentz oscillators. The real part of the dielectric function is characterized by a screened plasma energy of 2.26 eV for x=0 which increased to 2.80 eV for x=0.58 in the Ti_1-xNb_xN film.

Original language	English
Title of host publication	Solid State Physics - Proceedings of the 56th DAE Solid State Physics Symposium 2011
Pages	699-700
Number of pages	2
Edition	1
DOIs	https://doi.org/10.1063/1.4710195
State	Published - 1 Dec 2012
Externally published	Yes
Event	56th DAE Solid State Physics Symposium 2011 - Kattankulathur, Tamilnadu, India Duration: 19 Dec 2011 → 23 Dec 2011

Publication series

Name	AIP Conference Proceedings
Number	1
Volume	1447
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	56th DAE Solid State Physics Symposium 2011
Country/Territory	India
City	Kattankulathur, Tamilnadu
Period	19/12/11 → 23/12/11

Keywords

Drude-Lorentz model
TiN thin films
dielectric function
reflectance

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.4710195

Cite this

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title = "Optical and electronic properties of Ti1-xNbxN thin films",

abstract = "Ti1-xNbxN thin films with x=0, 0.26, 0.41, 0.58 and 1 were deposited on silicon (311) substrate by RF magnetron sputtering. The dielectric functions of these films were calculated by fitting measured reflectance spectra to the Drude-Lorentz model. The measured reflectance spectra exhibits a minimum in the visible region and this feature shifts to higher energy (shorter wavelength) with increase in x. The observed behavior can be modeled as the response of four Lorentz oscillators. The real part of the dielectric function is characterized by a screened plasma energy of 2.26 eV for x=0 which increased to 2.80 eV for x=0.58 in the Ti1-xNbxN film.",

keywords = "Drude-Lorentz model, TiN thin films, dielectric function, reflectance",

author = "K. Vasu and Gopikrishnan, {G. M.} and Krishna, {M. Ghanashyam} and Padmanabhan, {K. A.}",

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Vasu, K, Gopikrishnan, GM, Krishna, MG & Padmanabhan, KA 2012, Optical and electronic properties of Ti_1-xNb_xN thin films. in Solid State Physics - Proceedings of the 56th DAE Solid State Physics Symposium 2011. 1 edn, AIP Conference Proceedings, no. 1, vol. 1447, pp. 699-700, 56th DAE Solid State Physics Symposium 2011, Kattankulathur, Tamilnadu, India, 19/12/11. https://doi.org/10.1063/1.4710195

Optical and electronic properties of Ti_1-xNb_xN thin films. / Vasu, K.; Gopikrishnan, G. M.; Krishna, M. Ghanashyam et al.
Solid State Physics - Proceedings of the 56th DAE Solid State Physics Symposium 2011. 1. ed. 2012. p. 699-700 (AIP Conference Proceedings; Vol. 1447, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - Ti1-xNbxN thin films with x=0, 0.26, 0.41, 0.58 and 1 were deposited on silicon (311) substrate by RF magnetron sputtering. The dielectric functions of these films were calculated by fitting measured reflectance spectra to the Drude-Lorentz model. The measured reflectance spectra exhibits a minimum in the visible region and this feature shifts to higher energy (shorter wavelength) with increase in x. The observed behavior can be modeled as the response of four Lorentz oscillators. The real part of the dielectric function is characterized by a screened plasma energy of 2.26 eV for x=0 which increased to 2.80 eV for x=0.58 in the Ti1-xNbxN film.

AB - Ti1-xNbxN thin films with x=0, 0.26, 0.41, 0.58 and 1 were deposited on silicon (311) substrate by RF magnetron sputtering. The dielectric functions of these films were calculated by fitting measured reflectance spectra to the Drude-Lorentz model. The measured reflectance spectra exhibits a minimum in the visible region and this feature shifts to higher energy (shorter wavelength) with increase in x. The observed behavior can be modeled as the response of four Lorentz oscillators. The real part of the dielectric function is characterized by a screened plasma energy of 2.26 eV for x=0 which increased to 2.80 eV for x=0.58 in the Ti1-xNbxN film.

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