Abstract
CdSe crystals were grown by the seeded physical vapor transport method with helium on CdS0.67Se0.33 seeds. A CrSe source was used for doping of both the CdSe and CdS0.67Se0.33 seed crystals with chromium during growth. An absorption peak in the near-IR range of 1.5-2.2 μm associated with the intracenter 5T2→ 5E transitions of Cr2+ ions was realized. The Cr 2+ concentration in the various samples was calculated using the experimentally obtained peak values of the absorption coefficients, and it was found to vary from 1017 to 3×1018 cm-3. A 'blue' shift of the Cr2+-related near-IR absorption band maximum in CdS0.67Se0.33 relatively to the CdSe matrix was demonstrated for the first time. The measured Hall mobility of charge carriers in CdSe crystals with Cr concentration at a level of 2×1018 cm-3 reached a maximum value of 6000 cm2/V s at 50 K.
Original language | English |
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Pages (from-to) | 50-55 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 290 |
Issue number | 1 |
DOIs | |
State | Published - 15 Apr 2006 |
Keywords
- A1. II-VI semiconductor compounds
- A2. Crystal growth
- B1. Optical properties
- B2. Intracenter impurity transition
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry