Optical and transport properties of chromium-doped CdSe and CdS 0.67Se0.33 crystals

V. Kasiyan; Z. Dashevsky; R. Shneck; E. Towe

doi:10.1016/j.jcrysgro.2005.12.118

Optical and transport properties of chromium-doped CdSe and CdS _0.67Se_0.33 crystals

V. Kasiyan, Z. Dashevsky, R. Shneck, E. Towe

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

CdSe crystals were grown by the seeded physical vapor transport method with helium on CdS_0.67Se_0.33 seeds. A CrSe source was used for doping of both the CdSe and CdS_0.67Se_0.33 seed crystals with chromium during growth. An absorption peak in the near-IR range of 1.5-2.2 μm associated with the intracenter ⁵T₂→ ⁵E transitions of Cr²⁺ ions was realized. The Cr ²⁺ concentration in the various samples was calculated using the experimentally obtained peak values of the absorption coefficients, and it was found to vary from 10¹⁷ to 3×10¹⁸ cm^-3. A 'blue' shift of the Cr²⁺-related near-IR absorption band maximum in CdS_0.67Se_0.33 relatively to the CdSe matrix was demonstrated for the first time. The measured Hall mobility of charge carriers in CdSe crystals with Cr concentration at a level of 2×10¹⁸ cm^-3 reached a maximum value of 6000 cm²/V s at 50 K.

Original language	English
Pages (from-to)	50-55
Number of pages	6
Journal	Journal of Crystal Growth
Volume	290
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.12.118
State	Published - 15 Apr 2006

Keywords

A1. II-VI semiconductor compounds
A2. Crystal growth
B1. Optical properties
B2. Intracenter impurity transition

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2005.12.118

Cite this

@article{917e264909484466985e5b822d9c2c4c,

title = "Optical and transport properties of chromium-doped CdSe and CdS 0.67Se0.33 crystals",

abstract = "CdSe crystals were grown by the seeded physical vapor transport method with helium on CdS0.67Se0.33 seeds. A CrSe source was used for doping of both the CdSe and CdS0.67Se0.33 seed crystals with chromium during growth. An absorption peak in the near-IR range of 1.5-2.2 μm associated with the intracenter 5T2→ 5E transitions of Cr2+ ions was realized. The Cr 2+ concentration in the various samples was calculated using the experimentally obtained peak values of the absorption coefficients, and it was found to vary from 1017 to 3×1018 cm-3. A 'blue' shift of the Cr2+-related near-IR absorption band maximum in CdS0.67Se0.33 relatively to the CdSe matrix was demonstrated for the first time. The measured Hall mobility of charge carriers in CdSe crystals with Cr concentration at a level of 2×1018 cm-3 reached a maximum value of 6000 cm2/V s at 50 K.",

keywords = "A1. II-VI semiconductor compounds, A2. Crystal growth, B1. Optical properties, B2. Intracenter impurity transition",

author = "V. Kasiyan and Z. Dashevsky and R. Shneck and E. Towe",

note = "Funding Information: The Support of the United States-Israel Binational science foundation (BSF) for the present study under Grant No. 2002409 is gratefully acknowledged. We thank Yu. Korostelin for preliminary discussions.",

year = "2006",

month = apr,

day = "15",

doi = "10.1016/j.jcrysgro.2005.12.118",

language = "English",

volume = "290",

pages = "50--55",

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TY - JOUR

T1 - Optical and transport properties of chromium-doped CdSe and CdS 0.67Se0.33 crystals

AU - Kasiyan, V.

AU - Dashevsky, Z.

AU - Shneck, R.

AU - Towe, E.

N1 - Funding Information: The Support of the United States-Israel Binational science foundation (BSF) for the present study under Grant No. 2002409 is gratefully acknowledged. We thank Yu. Korostelin for preliminary discussions.

PY - 2006/4/15

Y1 - 2006/4/15

N2 - CdSe crystals were grown by the seeded physical vapor transport method with helium on CdS0.67Se0.33 seeds. A CrSe source was used for doping of both the CdSe and CdS0.67Se0.33 seed crystals with chromium during growth. An absorption peak in the near-IR range of 1.5-2.2 μm associated with the intracenter 5T2→ 5E transitions of Cr2+ ions was realized. The Cr 2+ concentration in the various samples was calculated using the experimentally obtained peak values of the absorption coefficients, and it was found to vary from 1017 to 3×1018 cm-3. A 'blue' shift of the Cr2+-related near-IR absorption band maximum in CdS0.67Se0.33 relatively to the CdSe matrix was demonstrated for the first time. The measured Hall mobility of charge carriers in CdSe crystals with Cr concentration at a level of 2×1018 cm-3 reached a maximum value of 6000 cm2/V s at 50 K.

AB - CdSe crystals were grown by the seeded physical vapor transport method with helium on CdS0.67Se0.33 seeds. A CrSe source was used for doping of both the CdSe and CdS0.67Se0.33 seed crystals with chromium during growth. An absorption peak in the near-IR range of 1.5-2.2 μm associated with the intracenter 5T2→ 5E transitions of Cr2+ ions was realized. The Cr 2+ concentration in the various samples was calculated using the experimentally obtained peak values of the absorption coefficients, and it was found to vary from 1017 to 3×1018 cm-3. A 'blue' shift of the Cr2+-related near-IR absorption band maximum in CdS0.67Se0.33 relatively to the CdSe matrix was demonstrated for the first time. The measured Hall mobility of charge carriers in CdSe crystals with Cr concentration at a level of 2×1018 cm-3 reached a maximum value of 6000 cm2/V s at 50 K.

KW - A1. II-VI semiconductor compounds

KW - A2. Crystal growth

KW - B1. Optical properties

KW - B2. Intracenter impurity transition

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