Optical constants of InP and GaP

Aleksandra B. Djurišić; Aleksandar D. Rakić; Jovan M. Elazar; E. Herbert Li; Marian L. Majewski

doi:10.1109/ICMEL.2000.840571

Optical constants of InP and GaP

Aleksandra B. Djurišić, Aleksandar D. Rakić, Jovan M. Elazar, E. Herbert Li, Marian L. Majewski

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Calculation of the optical constants of InP and GaP is presented. The employed model is a modification of Adachi's model of the optical constants of semiconductors, which employs adjustable broadening instead of the conventional Lorentzian one. In this work we do not take into account excitonic effects at E₁ and E₁+Δ ₁ critical points. In such a manner, fewer adjustable model parameters are required and the term with dubious physical interpretation describing excitons at E₁ and E ₁+Δ ₁ is left out. We obtain excellent agreement with experimental data over the entire 1-6 eV range, with relative rms error for the refractive index equal 1.0% for InP and 1.2% for GaP.

Original language	English
Title of host publication	2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers
Pages	269-272
Number of pages	4
ISBN (Print)	0780352351, 9780780352353
DOIs	https://doi.org/10.1109/ICMEL.2000.840571
State	Published - 1 Jan 2000
Externally published	Yes
Event	2000 22nd International Conference on Microelectronics, MIEL 2000 - Nis, Serbia Duration: 14 May 2000 → 17 May 2000

Publication series

Name	2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
Volume	1

Conference

Conference	2000 22nd International Conference on Microelectronics, MIEL 2000
Country/Territory	Serbia
City	Nis
Period	14/05/00 → 17/05/00

ASJC Scopus subject areas

Electrical and Electronic Engineering
General Engineering

Access to Document

10.1109/ICMEL.2000.840571

Cite this

Djurišić, A. B., Rakić, A. D., Elazar, J. M., Li, E. H., & Majewski, M. L. (2000). Optical constants of InP and GaP. In 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings (pp. 269-272). Article 840571 (2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings; Vol. 1). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICMEL.2000.840571

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title = "Optical constants of InP and GaP",

abstract = "Calculation of the optical constants of InP and GaP is presented. The employed model is a modification of Adachi's model of the optical constants of semiconductors, which employs adjustable broadening instead of the conventional Lorentzian one. In this work we do not take into account excitonic effects at E1 and E1+Δ 1 critical points. In such a manner, fewer adjustable model parameters are required and the term with dubious physical interpretation describing excitons at E1 and E 1+Δ 1 is left out. We obtain excellent agreement with experimental data over the entire 1-6 eV range, with relative rms error for the refractive index equal 1.0% for InP and 1.2% for GaP.",

author = "Djuri{\v s}i{\'c}, {Aleksandra B.} and Raki{\'c}, {Aleksandar D.} and Elazar, {Jovan M.} and Li, {E. Herbert} and Majewski, {Marian L.}",

year = "2000",

month = jan,

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doi = "10.1109/ICMEL.2000.840571",

language = "English",

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series = "2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",

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booktitle = "2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",

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note = "2000 22nd International Conference on Microelectronics, MIEL 2000 ; Conference date: 14-05-2000 Through 17-05-2000",

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Djurišić, AB, Rakić, AD, Elazar, JM, Li, EH & Majewski, ML 2000, Optical constants of InP and GaP. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings., 840571, 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, vol. 1, Institute of Electrical and Electronics Engineers, pp. 269-272, 2000 22nd International Conference on Microelectronics, MIEL 2000, Nis, Serbia, 14/05/00. https://doi.org/10.1109/ICMEL.2000.840571

Optical constants of InP and GaP. / Djurišić, Aleksandra B.; Rakić, Aleksandar D.; Elazar, Jovan M. et al.
2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. Institute of Electrical and Electronics Engineers, 2000. p. 269-272 840571 (2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Optical constants of InP and GaP

AU - Djurišić, Aleksandra B.

AU - Rakić, Aleksandar D.

AU - Elazar, Jovan M.

AU - Li, E. Herbert

AU - Majewski, Marian L.

PY - 2000/1/1

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N2 - Calculation of the optical constants of InP and GaP is presented. The employed model is a modification of Adachi's model of the optical constants of semiconductors, which employs adjustable broadening instead of the conventional Lorentzian one. In this work we do not take into account excitonic effects at E1 and E1+Δ 1 critical points. In such a manner, fewer adjustable model parameters are required and the term with dubious physical interpretation describing excitons at E1 and E 1+Δ 1 is left out. We obtain excellent agreement with experimental data over the entire 1-6 eV range, with relative rms error for the refractive index equal 1.0% for InP and 1.2% for GaP.

AB - Calculation of the optical constants of InP and GaP is presented. The employed model is a modification of Adachi's model of the optical constants of semiconductors, which employs adjustable broadening instead of the conventional Lorentzian one. In this work we do not take into account excitonic effects at E1 and E1+Δ 1 critical points. In such a manner, fewer adjustable model parameters are required and the term with dubious physical interpretation describing excitons at E1 and E 1+Δ 1 is left out. We obtain excellent agreement with experimental data over the entire 1-6 eV range, with relative rms error for the refractive index equal 1.0% for InP and 1.2% for GaP.

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DO - 10.1109/ICMEL.2000.840571

M3 - Conference contribution

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SN - 0780352351

SN - 9780780352353

T3 - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings

SP - 269

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BT - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings

PB - Institute of Electrical and Electronics Engineers

T2 - 2000 22nd International Conference on Microelectronics, MIEL 2000

Y2 - 14 May 2000 through 17 May 2000

ER -

Optical constants of InP and GaP

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