Optical parametric oscillation in orientation patterned GaAs waveguides

  • M. B. Oron
  • , P. Blau
  • , S. Pearl
  • , M. Katz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations

Abstract

Orientation patterned GaAs waveguides for parametric conversion from near to mid-infrared have been fabricated by MOCVD growth on OPGaAs templates. A monolithic OPO cavity was formed by dielectric facet coating. Parametric oscillation characteristics were investigated using a pulsed source tunable in the range of 1.98-2.05μm. Type I and II parametric interactions have been observed, differing in QPM wavelength. OPO threshold power of 7W, using a pulsed pump, and 5.7W using a CW laser was obtained in a 13mm long waveguide of 39μm period. Overall Parametric peak power of 0.6W at pulsed pump peak power of 11.6W was generated at signal & idler wavelengths of 3.6μm & 4.5μm respectively and pump wavelength of 2.015μm. Tuning curves for Type I and type II parametric operation in OPGaAs WGs have been calculated and verified by the measured signal and idler wavelengths.

Original languageEnglish
Title of host publicationNonlinear Frequency Generation and Conversion
Subtitle of host publicationMaterials, Devices, and Applications XI
DOIs
StatePublished - 18 Apr 2012
Externally publishedYes
EventNonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XI - San Francisco, CA, United States
Duration: 24 Jan 201226 Jan 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8240
ISSN (Print)0277-786X

Conference

ConferenceNonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XI
Country/TerritoryUnited States
CitySan Francisco, CA
Period24/01/1226/01/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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