The optical density of states (ODOS) of the mixed‐valent semiconductor TmSe is considered as the superposition of the interband ODOS for the selfconsistent band spectrum of TmSe calculated by the linear augmented plane wave method in the scalar relativistic approximation, and the interconfigurational DOS arising due to the excitation of the Tm f‐shell. This approach is based on the general description of the mixed‐valence semiconductor as an excitonic dielectric. The results of the calculations are compared with the experimental reflectivity spectrum of TmSe.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics