Optical Properties of the Mixed‐Valent TmSe

K. A. Kikoin; G. P. Nizhnikova; O. V. Farberovich

doi:10.1002/pssb.2221590221

Optical Properties of the Mixed‐Valent TmSe

K. A. Kikoin, G. P. Nizhnikova, O. V. Farberovich

Research output: Contribution to journal › Article › peer-review

Abstract

The optical density of states (ODOS) of the mixed‐valent semiconductor TmSe is considered as the superposition of the interband ODOS for the selfconsistent band spectrum of TmSe calculated by the linear augmented plane wave method in the scalar relativistic approximation, and the interconfigurational DOS arising due to the excitation of the Tm f‐shell. This approach is based on the general description of the mixed‐valence semiconductor as an excitonic dielectric. The results of the calculations are compared with the experimental reflectivity spectrum of TmSe.

Original language	English
Pages (from-to)	743-753
Number of pages	11
Journal	physica status solidi (b)
Volume	159
Issue number	2
DOIs	https://doi.org/10.1002/pssb.2221590221
State	Published - 1 Jan 1990
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "The optical density of states (ODOS) of the mixed‐valent semiconductor TmSe is considered as the superposition of the interband ODOS for the selfconsistent band spectrum of TmSe calculated by the linear augmented plane wave method in the scalar relativistic approximation, and the interconfigurational DOS arising due to the excitation of the Tm f‐shell. This approach is based on the general description of the mixed‐valence semiconductor as an excitonic dielectric. The results of the calculations are compared with the experimental reflectivity spectrum of TmSe.",

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N2 - The optical density of states (ODOS) of the mixed‐valent semiconductor TmSe is considered as the superposition of the interband ODOS for the selfconsistent band spectrum of TmSe calculated by the linear augmented plane wave method in the scalar relativistic approximation, and the interconfigurational DOS arising due to the excitation of the Tm f‐shell. This approach is based on the general description of the mixed‐valence semiconductor as an excitonic dielectric. The results of the calculations are compared with the experimental reflectivity spectrum of TmSe.

AB - The optical density of states (ODOS) of the mixed‐valent semiconductor TmSe is considered as the superposition of the interband ODOS for the selfconsistent band spectrum of TmSe calculated by the linear augmented plane wave method in the scalar relativistic approximation, and the interconfigurational DOS arising due to the excitation of the Tm f‐shell. This approach is based on the general description of the mixed‐valence semiconductor as an excitonic dielectric. The results of the calculations are compared with the experimental reflectivity spectrum of TmSe.

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Optical Properties of the Mixed‐Valent TmSe

Abstract

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