Optical Properties of the Mixed‐Valent TmSe

K. A. Kikoin, G. P. Nizhnikova, O. V. Farberovich

Research output: Contribution to journalArticlepeer-review


The optical density of states (ODOS) of the mixed‐valent semiconductor TmSe is considered as the superposition of the interband ODOS for the selfconsistent band spectrum of TmSe calculated by the linear augmented plane wave method in the scalar relativistic approximation, and the interconfigurational DOS arising due to the excitation of the Tm f‐shell. This approach is based on the general description of the mixed‐valence semiconductor as an excitonic dielectric. The results of the calculations are compared with the experimental reflectivity spectrum of TmSe.

Original languageEnglish
Pages (from-to)743-753
Number of pages11
Journalphysica status solidi (b)
Issue number2
StatePublished - 1 Jan 1990
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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